Chalcogenide MOCVD System with In situ Optical Characterization (MOCVD 2)

    Equipment/facility: Equipment

      Equipments Details


      A second Chalcogenide Metal Organic Chemical Vapor Deposition (MOCVD 2) instrument with the capabilities for in situ optical characterization is expected to be installed during the summer of 2018. In-situ optical characterization will enable on-the-fly modifications to the growth process for the desired layer composition. It would also provide a powerful tool to probe the growth mechanism of the layered chalcogenides. The additional analysis chamber with Raman and PL aids in characterizing these sensitive materials in a controlled ambient.

      8 bubbler stations and 4 gas sources including H2Se and H2S
      In situ spectroscopic ellipsometery
      Separate analysis chamber for Raman and Photoluminescence analysis
      Wide range of growth temperatures (200-1000°C) and reactor pressures (50-700 Torr)
      Current Process Capabilities:
      WS2, WSe2, MoS2, MoSe2, NbS2, NbSe2, including various doped, alloys and heterostructures of these compounds


      Explore the research areas in which this equipment has been used. These labels are generated based on the related outputs. Together they form a unique fingerprint.