Material Science
Film
100%
Chemical Vapor Deposition
63%
Nanowire
58%
Thin Films
55%
Silicon
51%
Sapphire
40%
Density
36%
Heterojunction
32%
Monolayers
31%
Aluminum Nitride
23%
Field Effect Transistor
19%
Transition Metal Dichalcogenide
19%
Graphene
18%
Two-Dimensional Material
17%
Electrical Resistivity
17%
Vapor Phase Epitaxy
17%
Epitaxy
15%
Buffer Layer
14%
Aluminum
14%
Photoluminescence
11%
Tungsten
11%
Transistor
10%
Gallium Arsenide
9%
Metal-Organic Chemical Vapor Deposition
9%
Doping (Additives)
9%
Electronic Circuit
9%
Ultimate Tensile Strength
9%
Transmission Electron Microscopy
9%
Schottky Barrier
8%
Nucleation
8%
Surface Morphology
8%
Carrier Concentration
7%
Solar Cell
7%
Electronic Property
7%
Molybdenum
7%
Wet Etching
7%
Gallium Nitride
6%
Electron Mobility
6%
In Situ Stress Measurement
6%
Ferroelectric Material
6%
Magnesium
6%
Luminescence
6%
Superconducting Material
6%
Nitride Compound
6%
Boron Nitride
6%
Optical Property
5%
Annealing
5%
Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
36%
Silicon Nanowires (SiNWs)
32%
MgB2 Thin Film
27%
Sapphire
25%
Epitaxial
23%
WSe2
21%
Hybrid Physical-chemical Vapor Deposition (HPCVD)
21%
Aluminum Gallium Nitride (AlGaN)
20%
MgB2
19%
AlxGa1-xN
19%
Sapphire Substrate
18%
Vapor-liquid-solid Growth
18%
GaN Heterostructure
17%
Nanowires
16%
Metal Organic Vapor Phase Epitaxy (MOVPE)
14%
Growth Rate
13%
Chemical Vapor Deposition
12%
MgB2 Film
12%
Two Dimensional Materials
12%
GaN Films
12%
Molybdenite
12%
SiC Substrate
11%
Two Dimensional
11%
Field-effect Transistors
11%
Wafer-scale
10%
AlN Buffer Layer
10%
Transition Metal Dichalcogenides
10%
Electrical Properties
9%
Graphene
9%
Epitaxial Growth
9%
Stress Evolution
9%
2D Semiconductors
9%
Indium Gallium Nitride (InGaN)
8%
Growth Temperature
8%
Tensile Stress
8%
Monolayer WS2
8%
Surface Morphology
8%
Growth Conditions
8%
C-plane
8%
Growth Stress
8%
Low Temperature
7%
Silane
7%
AlGaN-GaN
7%
Structural Properties
7%
Annealing
7%
Heterostructure Field-effect Transistors
7%
Monolayer MoS2
7%
GaN Growth
7%
In Situ
7%
Room Temperature
7%
Engineering
Chemical Vapor Deposition
30%
Vapor Deposition
30%
Heterojunctions
21%
Thin Films
21%
Field-Effect Transistor
16%
Heterostructures
16%
Two Dimensional
15%
Sapphire Substrate
15%
Nitride
14%
Buffer Layer
9%
Tensile Stress σ
8%
Dopants
8%
Gas-Phase
8%
Nanowires
7%
Low-Temperature
6%
Metal Organic Chemical Vapor Deposition
6%
Gallium Arsenide
6%
Barrier Height
6%
Schottky Barrier
6%
Ray Diffraction
5%
Growth Temperature
5%
Tensiles
5%
2D Material
5%
