Material Science
Boron Nitride
13%
Capacitance
5%
Carrier Concentration
6%
Chemical Vapor Deposition
13%
Contact Resistance
10%
Density
20%
Dielectric Material
5%
Doping (Additives)
6%
Electronic Property
17%
Epitaxy
10%
Field Effect Transistor
16%
Film
26%
Gallium
7%
Graphene
100%
Heteroepitaxy
5%
Heterojunction
41%
Indium
5%
Metal-Organic Chemical Vapor Deposition
9%
Molybdenum
17%
Monolayers
47%
Nucleation
9%
Optical Property
8%
Oxidation Reaction
6%
Oxide Compound
9%
Photoluminescence
6%
Raman Spectroscopy
6%
Sapphire
10%
Scanning Tunneling Microscopy
11%
Silicon Carbide
10%
Thermal Stability
5%
Thin Films
8%
Transistor
17%
Transition Metal Dichalcogenide
42%
Transmission Electron Microscopy
9%
Tungsten
16%
Two-Dimensional Material
40%
Keyphrases
2D Materials
7%
2D Semiconductors
9%
Annealing
5%
Atomic Structure
5%
Atomically Thin
6%
Beyond Graphene
6%
Chemical Vapor Deposition
9%
Electronic Properties
13%
Epitaxial
7%
Epitaxial Graphene
32%
Few-layer
6%
Field-effect Transistors
8%
Graphene
44%
Graphene Layer
5%
Graphene Transistor
7%
Graphene-based Materials
5%
Heterostructure
19%
Hexagonal Boron Nitride (h-BN)
9%
High Performance
5%
Metal-organic Chemical Vapor Deposition (MOCVD)
8%
Molybdenite
30%
Monolayer MoS2
13%
Monolayer WS2
8%
Ohmic Contact
9%
Optical Properties
6%
P-type
7%
Polar Metal
7%
Room Temperature
5%
Sapphire
7%
Scanning Tunneling Microscopy
8%
Semiconductors
6%
Silicon Carbide
6%
Specific Contact Resistance
5%
Transition Metal Dichalcogenides
28%
Tungsten Diselenide
7%
Two Dimensional
18%
Two Dimensional Materials
25%
Two-dimensional Transition Metal Dichalcogenides
6%
Ultrathin
7%
Van Der Waals Heterostructures
5%
Wafer-scale
8%
WSe2
31%
