Personal profile
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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SDG 7 Affordable and Clean Energy
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Dive into the research topics where Maria Hilse is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
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In Situ Composition and Thickness Monitoring during (BixIn1-x)2Se3 Thin Film Growth: toward Automated Synthesis Control Using Spectroscopic Ellipsometry for Quantum and Spintronic Devices
Hilse, M., Niedel, J., Zhang, Q., Richardella, A., Hijazi, H., Shallenberger, J. R., Hengstebeck, R., Law, S., Samarth, N. & Peiris, F. C., Apr 17 2026, In: ACS Applied Nano Materials. 9, 15, p. 6542-6550 9 p.Research output: Contribution to journal › Article › peer-review
Open Access -
Molecular beam epitaxy growth of wafer-scale SnSe van der Waals ultrathin layers
Zhang, Q., Hilse, M., Bardsley, J., Applegate, M. & Law, S., May 1 2026, In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 44, 3, 032202.Research output: Contribution to journal › Article › peer-review
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Analyzing the impact of Se concentration during the molecular beam epitaxy deposition of 2D SnSe with atomistic-scale simulations and explainable machine learning
Chin, J. R., Moses, I. A., Wang, M., Frye, M. B., Yu, M., Nayir, N., Hilse, M., van Duin, A. C. T., Law, S., Reinhart, W. & Garten, L. M., Dec 2025, In: Materials Today Advances. 28, 100640.Research output: Contribution to journal › Article › peer-review
Open Access2 Link opens in a new tab Scopus citations -
Correction to: Effects of Sb and Bi Doping in SnTe Layers Grown by Molecular Beam Epitaxy (ACS Appl. Electron. Mater. (2025) 7:8 (3543−3551) DOI: 10.1021/acsaelm.5c00299)
Zhang, Q., Caucci, M. K., Hilse, M., Diaz Gomez, A., Sinnott, S. & Law, S., Jun 24 2025, In: ACS Applied Electronic Materials. 7, 12, p. 5730 1 p.Research output: Contribution to journal › Comment/debate › peer-review
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Effects of Sb and Bi Doping in SnTe Layers Grown by Molecular Beam Epitaxy
Zhang, Q., Caucci, M. K., Hilse, M., Diaz Gomez, A., Sinnott, S. & Law, S., Apr 22 2025, In: ACS Applied Electronic Materials. 7, 8, p. 3543-3551 9 p.Research output: Contribution to journal › Article › peer-review
1 Link opens in a new tab Scopus citations