Keyphrases
Halide Chemical Vapour Deposition
68%
Epitaxial Graphene
60%
6H-SiC
51%
Semi-insulating SiC
43%
Graphene
42%
C-Si
39%
Single-crystal SiC
39%
Crystal Growth
37%
Boule
34%
4H-SiC
33%
Growth Rate
33%
Wafer
31%
6H-SiC Crystal
31%
Textured Ceramics
27%
CuO Doping
25%
Electron Paramagnetic Resonance
24%
Physical Vapor Transport
24%
PbTiO3
24%
Native Defects
23%
Growth Conditions
23%
Undoped
23%
PbTiO3 Ceramics
23%
Electron Traps
22%
Growth Temperature
22%
Bulk Crystal
21%
PMN-PT Ceramics
21%
Piezoelectric Properties
21%
High Coercive Field
21%
Boron Concentration
21%
Piezoelectric Ceramics
20%
High Temperature Anneal
20%
Electronic Properties
20%
Textured piezoelectric Ceramic
19%
Annealing
19%
High Power Transducers
19%
Electromechanical Properties
19%
In-situ Graphene
18%
RF Electronics
18%
Bulk SiC
18%
Secondary Ion Mass Spectrometry
18%
High Purity
18%
Nitrogen Concentration
18%
Barium Titanate
17%
Physical Vapor Transport Growth
17%
Post-growth
17%
Nitrogen Incorporation
16%
4H-SiC Substrates
16%
Room Temperature
16%
Silicon Carbide
16%
Graphene Layer
15%
Material Science
Graphene
100%
Chemical Vapor Deposition
69%
Halide
56%
Piezoelectric Ceramics
52%
Piezoelectricity
41%
Photoluminescence
41%
Electrical Resistivity
39%
Film
36%
Density
35%
Piezoelectric Property
32%
Annealing
26%
Silicon
25%
Boron
24%
Silicon Carbide
24%
Field Effect Transistor
19%
Secondary Ion Mass Spectrometry
19%
Electronic Property
19%
Activation Energy
17%
Barium Titanate
14%
Domain Wall
14%
Single Crystal
14%
Deep-Level Transient Spectroscopy
14%
Carrier Concentration
13%
Vapor Phase Deposition
13%
Doping (Additives)
12%
ZnO
12%
Acceptor Doping
12%
Grain Size
12%
Oxygen Vacancy
10%
Ultimate Tensile Strength
10%
Carrier Mobility
10%
Ferroelectricity
9%
Dielectric Property
9%
Carrier Lifetime
9%
Electron Mobility
9%
Capacitance
9%
Epitaxy
9%
Transistor
8%
Dielectric Material
8%
Metal-Oxide-Semiconductor Field-Effect Transistor
7%
Aluminum
7%
Nucleation
7%
Electromechanical Coupling
6%
Transmission Electron Microscopy
6%
Rheology
6%
Engineering
Chemical Vapor Deposition
33%
Vapor Deposition
31%
Electron Trap
25%
Growth Condition
23%
Gas-Phase
21%
Epitaxial Graphene
21%
Native Defect
19%
Graphene
19%
Source Material
15%
Threading Dislocation
14%
Growth Temperature
13%
Reactant
13%
Torr
12%
Boron Concentration
12%
Defects
12%
Growth Kinetics
12%
Deep Level
12%
Transients
12%
Low-Temperature
10%
Deposition Process
10%
Activation Energy
9%
Diffusion Barrier
9%
Experimental Result
9%
Tensile Stress σ
9%
Dislocation Density
8%
Metal-Oxide-Semiconductor Field-Effect Transistor
8%
Carrier Lifetime
7%
Illustrates
7%
Annealing Temperature
7%
Cooling Rate
7%
Field-Effect Transistor
7%
Rich Condition
6%
Thermodynamic Equilibrium
6%
Bulk Crystal
6%
Major Type
6%
Atomic Layer Deposition
6%
Bias Voltage
6%
Data Point
6%
Hydrogen Gas
6%
Induced Change
6%
Dielectrics
6%
Deep Defect
6%
Low Growth Temperature
6%
Kinetic Study
6%
Limitations
6%
Barrier Coating
6%