Engineering & Materials Science
Annealing
30%
Atoms
19%
Barium titanate
15%
Boron
33%
Carrier mobility
14%
Chemical analysis
13%
Chemical vapor deposition
66%
Crystals
56%
Defects
49%
Densification
13%
Dielectric losses
13%
Domain walls
18%
Doping (additives)
46%
Electric properties
18%
Electromechanical coupling
15%
Electron traps
34%
Electronic equipment
15%
Electronic properties
20%
Epilayers
10%
Epitaxial growth
13%
Field effect transistors
25%
Grain growth
20%
Graphene
100%
Graphitization
15%
Growth kinetics
18%
Growth temperature
36%
Hole traps
22%
Hydrogen
17%
Lead titanate
57%
Metals
11%
Nitrogen
26%
Paramagnetic resonance
28%
Perovskite
20%
Photoluminescence
33%
Piezoelectric ceramics
61%
Piezoelectricity
14%
Polarization
19%
Powders
10%
Secondary ion mass spectrometry
27%
Silicon
13%
Silicon carbide
27%
Single crystals
16%
Sintering
14%
Substrates
35%
Temperature
28%
Texturing
21%
Thermodynamics
11%
Topography
10%
Transducers
19%
Vapors
21%
Chemical Compounds
Alkylamide
9%
Annealing
30%
Application
7%
Atomic Layer Epitaxy
7%
Boron Atom
26%
Carbon Atom
7%
Ceramic
66%
Chemical Vapour Deposition
51%
Compound Mobility
10%
Cooling
8%
Crystal Defect
7%
Deep Trap
7%
Densification
12%
Dielectric Loss
7%
Diffusion Barrier
9%
Doping Material
7%
Electrical Property
13%
Electron Trap
33%
Epitaxial Film
8%
EPR Spectroscopy
26%
Field Effect
7%
Figure of Merit
8%
Flow
14%
Grain Growth
12%
Graphene
30%
Graphite
9%
Halide
37%
Hall Effect
8%
Hole Trap
21%
Hydrogen
15%
Liquid Film
13%
Microstructure
8%
Nitrogen
19%
Nozzle
7%
Photoluminescence
22%
Piezoelectricity
33%
Point Group C∞V
14%
Polarization
8%
Pressure
8%
Propane
11%
Purity
9%
Rhombohedral Space Group
7%
Secondary Ion Mass Spectroscopy
20%
Silicon Carbide
22%
Single Crystalline Solid
16%
Sintering
12%
Strain
15%
Thermodynamics
13%
Threading Dislocation
23%
Vapor Deposition Process
22%
Physics & Astronomy
annealing
16%
atomic layer epitaxy
6%
atoms
11%
boron
25%
boules
43%
carbon
10%
carrier mobility
10%
crystals
37%
defects
32%
electrical properties
12%
electrical resistivity
19%
electron mobility
9%
electron paramagnetic resonance
18%
electronics
7%
electrons
11%
graphene
40%
graphite
7%
halides
73%
Hall effect
8%
hydrogen
15%
impurities
7%
inclination
10%
International System of Units
9%
kinetics
7%
metal films
6%
nitrogen
30%
nonuniformity
12%
photoluminescence
14%
purity
20%
room temperature
6%
secondary ion mass spectrometry
21%
silicon
6%
silicon carbides
22%
silicon tetrachloride
9%
single crystals
13%
spectral signatures
8%
spectroscopy
6%
stoichiometry
7%
temperature
10%
tensile stress
9%
thermodynamic equilibrium
9%
thermodynamics
5%
topography
7%
transistors
6%
traps
24%
vapor deposition
60%
vapors
29%
wafers
24%