Keyphrases
Parylene C
35%
MOSFET
30%
Reactive Ion Etching
26%
Microfibrous
26%
Annealing
24%
Gate Oxide
21%
Deep Level Transient Spectroscopy
21%
Oxides
21%
N-channel
20%
Plasma Etching
18%
Columnar
17%
Electron Traps
16%
Boron-doped Silicon
15%
Hole Trapping
14%
Metal Oxide
14%
Fowler-Nordheim
14%
Field-effect Transistors
14%
Polysilicon
14%
Electrical Stress
13%
Charge Pump
13%
Silica
12%
Charge Plasma
11%
Electrical Properties
11%
Si Substrate
11%
Plasma Processing
11%
Boron Doping
10%
Solid-phase Crystallization
10%
Transistor
10%
Thin-film Transistors
10%
A-Si
10%
Nanocrystals
9%
PbSe
9%
Poly(3-hexylthiophene) (P3HT)
9%
Polymer Hybrid
9%
Photocarriers
9%
Charge Carrier Mobility
9%
Magnetic Field
9%
Interlayer Dielectric
8%
Defect States
8%
P-channel
8%
Leakage Current
8%
Plasma Exposure
8%
Bias Stress
8%
Valence Band
8%
U-shaped Trench-gate MOSFET (UMOSFET)
8%
Material Properties
7%
Polycrystalline Si
7%
Single Crystal
7%
Capacitance
7%
Charging Damage
7%
Material Science
Silicon
100%
Oxide Compound
61%
Metal-Oxide-Semiconductor Field-Effect Transistor
36%
Transistor
34%
Thin Films
32%
Deep-Level Transient Spectroscopy
29%
Capacitance
28%
Reactive Ion Etching
27%
Annealing
24%
Plasma Etching
22%
Metal Oxide
22%
Field Effect Transistor
20%
Boron
20%
Film
16%
Thin-Film Transistor
15%
Capacitor
13%
Charge Carrier
11%
Schottky Diode
11%
Density
11%
Carrier Mobility
10%
Photovoltaics
10%
Hot Carrier
10%
Selective Excitation
9%
Carrier Transport
9%
Photoluminescence
9%
Dielectric Material
9%
Schottky Barrier
8%
Amorphous Silicon
7%
Silicon Carbide
7%
Permittivity
7%
Luminescence
5%
Materials Property
5%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
44%
Gate Oxide
40%
Transients
26%
Deep Level
24%
Silicon Oxide
23%
Thin Films
22%
Field-Effect Transistor
21%
Si Interface
17%
Defects
16%
Induced Damage
14%
Polysilicon
14%
Valence Band
12%
Dielectrics
12%
Polysilicon
11%
Channel Length
11%
Thin-Film Transistor
10%
Plasma Applications
10%
Channel Transistor
10%
Low-Temperature
9%
Magnetic Field
9%
Interlayer
9%
Si Substrate
8%
Metal Gate
7%
Microfibres
7%
Room Temperature
7%
Constant Voltage
7%
Reverse Bias
7%
Induced Defect
6%
Antenna
6%
Loss Factor
5%
Conduction Band
5%
Electron Trap
5%
Temperature Stress
5%
Interconnects
5%
Relative Permittivity
5%
