Keyphrases
A-Si
10%
Annealing
24%
Bias Stress
8%
Boron Doping
10%
Boron-doped Silicon
15%
Capacitance
7%
Charge Carrier Mobility
9%
Charge Plasma
11%
Charge Pump
13%
Charging Damage
7%
Columnar
17%
Deep Level Transient Spectroscopy
21%
Defect States
8%
Electrical Properties
11%
Electrical Stress
12%
Electron Traps
16%
Field-effect Transistors
14%
Fowler-Nordheim
14%
Gate Oxide
20%
Hole Trapping
14%
Interlayer Dielectric
8%
Leakage Current
8%
Magnetic Field
9%
Material Properties
7%
Metal Oxide
14%
Microfibrous
26%
MOSFET
28%
N-channel
19%
Nanocrystals
9%
Oxides
20%
P-channel
8%
Parylene C
35%
PbSe
9%
Photocarriers
9%
Plasma Etching
15%
Plasma Exposure
8%
Plasma Processing
11%
Poly(3-hexylthiophene) (P3HT)
9%
Polycrystalline Si
7%
Polymer Hybrid
9%
Polysilicon
14%
Reactive Ion Etching
25%
Si Substrate
11%
Silica
12%
Single Crystal
7%
Solid-phase Crystallization
10%
Thin-film Transistors
10%
Transistor
9%
U-shaped Trench-gate MOSFET (UMOSFET)
8%
Valence Band
8%
Material Science
Amorphous Silicon
7%
Annealing
24%
Boron
20%
Capacitance
28%
Capacitor
13%
Carrier Mobility
10%
Carrier Transport
9%
Charge Carrier
11%
Deep-Level Transient Spectroscopy
29%
Density
11%
Dielectric Material
9%
Field Effect Transistor
20%
Film
16%
Hot Carrier
10%
Luminescence
5%
Materials Property
5%
Metal Oxide
22%
Metal-Oxide-Semiconductor Field-Effect Transistor
34%
Oxide Compound
59%
Permittivity
7%
Photoluminescence
9%
Photovoltaics
10%
Plasma Etching
20%
Reactive Ion Etching
26%
Schottky Barrier
8%
Schottky Diode
11%
Selective Excitation
9%
Silicon
100%
Silicon Carbide
7%
Thin Films
32%
Thin-Film Transistor
15%
Transistor
32%
Engineering
Antenna
6%
Channel Length
9%
Channel Transistor
7%
Conduction Band
5%
Constant Voltage
7%
Deep Level
24%
Defects
16%
Dielectrics
12%
Electron Trap
5%
Field-Effect Transistor
21%
Gate Oxide
38%
Induced Damage
13%
Induced Defect
6%
Interconnects
5%
Interlayer
9%
Loss Factor
5%
Low-Temperature
9%
Magnetic Field
9%
Metal Gate
7%
Metal-Oxide-Semiconductor Field-Effect Transistor
42%
Microfibres
7%
Plasma Applications
10%
Polysilicon
14%
Polysilicon
11%
Relative Permittivity
5%
Reverse Bias
7%
Room Temperature
7%
Si Interface
16%
Si Substrate
8%
Silicon Oxide
23%
Temperature Stress
5%
Thin Films
22%
Thin-Film Transistor
10%
Transients
26%
Valence Band
12%
