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Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Dive into the research topics where Patrick M. Lenahan is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Projects
- 1 Active
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Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications
Moxim, S. J., Harmon, N. J., Myers, K. J., Ashton, J. P., Frantz, E. B., Flatté, M. E., Lenahan, P. M. & Ryan, J. T., Apr 21 2024, In: Journal of Applied Physics. 135, 15, 155703.Research output: Contribution to journal › Article › peer-review
Open Access -
Near Zero Field Magnetoresistance Spectroscopy: A New Tool in Semiconductor Reliability Physics
Lenahan, P. M., Frantz, E. B., King, S. W., Anders, M. A., Moxim, S. J., Ashton, J. P., Myers, K. J., Flatte, M. E. & Harmon, N. J., 2023, 2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., (IEEE International Reliability Physics Symposium Proceedings; vol. 2023-March).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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On The Absolute Sensitivity of Near-Zero Field Magnetoresistance for Device Reliability Studies
Allridge, E. A. & Lenahan, P. M., 2023, 2023 IEEE International Integrated Reliability Workshop, IIRW 2023. Institute of Electrical and Electronics Engineers Inc., (IEEE International Integrated Reliability Workshop Final Report).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices
Harmon, N. J., Ashton, J. P., Lenahan, P. M. & Flatté, M. E., Dec 18 2023, In: Applied Physics Letters. 123, 25, 251603.Research output: Contribution to journal › Article › peer-review
Open Access1 Scopus citations -
A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO MOSFETs via Electrically Detected Magnetic Resonance
Sharov, F. V., Moxim, S. J., Haase, G. S., Hughart, D. R. & Lenahan, P. M., Mar 1 2022, In: IEEE Transactions on Nuclear Science. 69, 3, p. 208-215 8 p.Research output: Contribution to journal › Article › peer-review
Open Access11 Scopus citations