Projects per year
Personal profile
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Dive into the research topics where Rongming Chu is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
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High-Voltage Characterization of Semiconductor Power Devices in Controlled Environments
Chu, R. (PI)
1/1/23 → …
Project: Research project
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Medium Voltage Nitride Power Transistors Enabled by Lateral Superjunction Technology (Tracking Number: 21-000001373)
Chu, R. (PI)
3/15/21 → …
Project: Research project
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Cryogenic Solid-state Circuit Breaker
Chu, R. (PI)
Advanced Research Projects Agency-Energy
7/15/21 → 7/14/24
Project: Research project
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Vertical GaN Transistor
Chu, R. (PI)
Advanced Research Projects Agency-Energy
3/7/14 → 4/15/18
Project: Research project
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(Ultra)wide-bandgap semiconductors for extreme environment electronics
Chu, R., Chen, K., Zetterling, C. M. & Schrimpf, R., Mar 1 2025, In: Applied Physics Letters. 126, 12, 120401.Research output: Contribution to journal › Editorial › peer-review
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Electrothermal Failure Physics of GaN Schottky Diodes Under High-Temperature Forward Biasing
Al-Mamun, N. S., Du, Y., Song, J., Chu, R. & Haque, A., Mar 2025, In: Micromachines. 16, 3, 242.Research output: Contribution to journal › Article › peer-review
Open Access -
Examining composition-dependent radiation response in AlGaN alloys
Jin, M., Reza, F., Hauck, A., Mahfuz, M., Wang, X., Chu, R. & Tuttle, B., May 1 2025, In: Acta Materialia. 289, 120891.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
Recent advances in GaN-based power devices and integration
Xiong, Y., Sadek, M. & Chu, R., Mar 2025, In: Semiconductor Science and Technology. 40, 3, 033002.Research output: Contribution to journal › Review article › peer-review
Open Access2 Scopus citations -
The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time
Kemmerling, J. T., Du, Y. & Chu, R., 2025, In: IEEE Transactions on Electron Devices. 72, 2, p. 604-610 7 p.Research output: Contribution to journal › Article › peer-review
2 Scopus citations