Projects per year
Personal profile
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Dive into the research topics where Rongming Chu is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
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Cryogenic Solid-state Circuit Breaker
Advanced Research Projects Agency-Energy
7/15/21 → 7/14/24
Project: Research project
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Vertical GaN Transistor
Advanced Research Projects Agency-Energy
3/7/14 → 4/15/18
Project: Research project
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8.85-kV/0.72-A Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode
Han, S. W., Sadek, M., Kemmerling, J. T., Guan, R. & Chu, R., 2022, 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., p. 119-121 3 p. (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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High-Temperature Static and Dynamic Characteristics of 4.2-kV GaN Super-Heterojunction p-n Diodes
Sadek, M., Han, S. W., Song, J., Gallagher, J. C., Anderson, T. J. & Chu, R., Apr 1 2022, In: IEEE Transactions on Electron Devices. 69, 4, p. 1912-1917 6 p.Research output: Contribution to journal › Article › peer-review
3 Scopus citations -
Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes
Kemmerling, J. T., Guan, R., Sadek, M., Isukapati, S., Sung, W., Han, S. W. & Chu, R., May 1 2022, In: IEEE Electron Device Letters. 43, 5, p. 701-704 4 p.Research output: Contribution to journal › Article › peer-review
1 Scopus citations -
12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes
Han, S. W., Song, J., Sadek, M., Molina, A., Ebrish, M. A., Mohney, S. E., Anderson, T. J. & Chu, R., Nov 1 2021, In: IEEE Transactions on Electron Devices. 68, 11, p. 5736-5741 6 p.Research output: Contribution to journal › Article › peer-review
Open Access6 Scopus citations -
Gan mos structures with low interface trap density
Chu, R., 2021, Ultra Clean Processing of Semiconductor Surfaces XV - Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021. Mertens, P. W., Wostyn, K., Meuris, M. & Heyns, M. (eds.). Trans Tech Publications Ltd, p. 79-83 5 p. (Solid State Phenomena; vol. 314 SSP).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution