Material Science
Thin-Film Transistor
100%
Thin Films
42%
Electronic Circuit
39%
Film
35%
ZnO
33%
Gallium Arsenide
27%
Piezoelectricity
19%
Field Effect Transistor
16%
Transistor
15%
Heterojunction
13%
Silicon
13%
Amorphous Silicon
12%
Polyimide
10%
Oxide Compound
9%
Electrical Resistivity
9%
Dielectric Material
8%
Contact Resistance
8%
Superconducting Material
7%
Density
7%
Microelectromechanical System
6%
Light-Emitting Diode
6%
Oxide Semiconductor
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
5%
Lead Zirconate Titanate
5%
Vanadium
5%
Electrical Property
5%
Ferroelectric Material
5%
Annealing
5%
Solar Cell
5%
Germanium
5%
Keyphrases
Organic Thin-film Transistors
39%
Thin-film Transistors
31%
Pentacene
25%
ZnO Thin Film Transistor
22%
Gallium Arsenide
17%
Polymer Substrate
14%
A-Si
13%
Field-effect Mobility
13%
Plasma-enhanced Atomic Layer Deposition (PEALD)
12%
High Mobility
11%
Threshold Voltage
10%
Transistor Circuits
10%
Low Temperature
9%
Annealing
9%
Glass Substrate
9%
Ring Oscillator
9%
Thin-film Circuits
8%
Active Layer
8%
Subthreshold Slope
8%
GaAs MESFET
7%
Propagation Delay
7%
Gate Dielectric
6%
Polyimide Substrate
6%
Transistor
6%
Anthradithiophene
6%
Pentacene Thin Film Transistor
6%
High Performance
6%
Ohmic Contact
6%
Piezoelectric Thin Film
6%
Self-aligned
6%
Organic Semiconductors
5%
Flexible Substrate
5%
Contact Resistance
5%
Electrical Properties
5%
Pb(Zr,Ti)O3
5%
Device Performance
5%
Microstructure
5%
Electrical Characteristics
5%
Thin Film Devices
5%
Double Gate
5%
Engineering
Thin-Film Transistor
60%
Thin Films
27%
Gallium Arsenide
21%
Piezoelectric
19%
Atomic Layer Deposition
12%
Low-Temperature
12%
Pentacene
10%
Heterojunctions
8%
Organic Light-Emitting Diode
8%
Transducer
8%
Flexible Substrate
7%
Active Layer
7%
Gate Length
6%
Propagation Delay
6%
Ohmic Contacts
5%
Ultrasonics
5%
Pentacene
5%
