Keyphrases
Strain Engineering
100%
Electronic Devices
100%
Heterostructure
100%
Device Application
100%
Metal Organic Vapor Phase Epitaxy (MOVPE)
75%
Aluminum Gallium Nitride (AlGaN)
75%
Processing Conditions
25%
Transmission Electron Microscopy
25%
Transistor Structure
25%
Epitaxy Growth
25%
Alternative Nitrogen Source
25%
Microstructural Properties
25%
Hall Measurement
25%
Growth of Groups
25%
Curriculum Development
25%
High Electron Mobility Transistor
25%
Optical Techniques
25%
In Situ
25%
GaN-based
25%
Learning Tools
25%
Interactive Fashion
25%
Undergraduate Research
25%
Induced Electric Field
25%
Young Women
25%
Device Testing
25%
Growth Characterization
25%
Material Properties
25%
Epitaxial Growth
25%
III-nitrides
25%
Photoluminescence
25%
Graduate Curriculum
25%
System Application
25%
Thin Film Stress
25%
Device Development
25%
Stress Relaxation
25%
Study Stress
25%
Indium
25%
Film Strain
25%
Diffraction
25%
Educational Needs
25%
Indium Gallium Nitride (InGaN)
25%
Stress-driven
25%
Educational Activities
25%
Device Fabrication
25%
Undergraduate Curriculum
25%
Post-growth
25%
Electrical Properties
25%
Stress Measurement
25%
Rapid Evaluation
25%
Course Assignment
25%
Material Science
Heterojunction
100%
Vapor Phase Epitaxy
75%
Thin Films
25%
Nitride Compound
25%
Stress Measurement
25%
Stress Relaxation
25%
Epitaxy
25%
Electron Mobility
25%
Photoluminescence
25%
Device Fabrication
25%
Indium
25%
Transistor
25%
Transmission Electron Microscopy
25%
Materials Property
25%
Engineering
Heterostructures
100%
Stress Relaxation
33%
Induced Electric Field
33%
Ray Diffraction
33%
Nitride
33%
Processing Condition
33%
Thin Films
33%
Heterojunctions
33%