Project Details
Description
Penn State researchers will develop a fundamental understanding of electrical contacts to GeTe. They will examine pre-metallization surface preparations and interfacial reactions between metals and GeTe. They will engineer the Schottky barrier height by tailoring the semiconductor surface composition through alloying with related semiconductors. Ultimately, they will develop ohmic contacts with extremely low resistance and excellent thermal stability suitable for GeTe RF phase change switches.
Status | Active |
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Effective start/end date | 3/21/16 → … |
Funding
- U.S. Navy: $390,000.00
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