HRL Laboratories will develop a high-performance, low-cost, vertical gallium nitride (GaN) transistor that could displace the silicon transistor technologies used in most high-power switching applications today. GaN transistors can operate at higher temperatures, voltages, and currents than their silicon counterparts, but they are expensive to manufacture. HRL will combine innovations in semiconductor material growth, device fabrication, and circuit design to create its high-performance GaN vertical transistor at a competitive manufacturing cost.
|Effective start/end date
|3/7/14 → 4/15/18
- Advanced Research Projects Agency-Energy: $3,510,986.00