(00l) Epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition

M. B. Telli; S. S.N. Bharadwaja; M. D. Biegalski; S. Trolier-Mckinstry

doi:10.1063/1.2403918

(00l) Epitaxial AgTaO₃ and AgNbO₃ thin films on (001)SrRuO₃/(001)LaAlO₃ substrates by chemical solution deposition

M. B. Telli, S. S.N. Bharadwaja, M. D. Biegalski, S. Trolier-Mckinstry

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

(00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTa O3 and ≤3.6% for AgNb O3. The tunability of the AgTa O3 film was 1.6% at 230 kVcm field, while 21% tunability was measured for AgNb O3 at 190 kVcm.

Original language	English (US)
Article number	252907
Journal	Applied Physics Letters
Volume	89
Issue number	25
DOIs	https://doi.org/10.1063/1.2403918
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2403918

Cite this

@article{419b87ccf82841ef937306228189ae2a,

title = "(00l) Epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition",

abstract = "(00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTa O3 and ≤3.6% for AgNb O3. The tunability of the AgTa O3 film was 1.6% at 230 kVcm field, while 21% tunability was measured for AgNb O3 at 190 kVcm.",

author = "Telli, {M. B.} and Bharadwaja, {S. S.N.} and Biegalski, {M. D.} and S. Trolier-Mckinstry",

note = "Funding Information: Financial support for this work was provided by the Penn State University Center for Dielectric Studies and the National Science Foundation (DMR-0103354). Additional support was provided by The Commonwealth of Pennsylvania and by NSF through the Materials Research Science and Engineering Center Program (DMR-0080019 and DMR-0213623).",

year = "2006",

doi = "10.1063/1.2403918",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - (00l) Epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition

AU - Telli, M. B.

AU - Bharadwaja, S. S.N.

AU - Biegalski, M. D.

AU - Trolier-Mckinstry, S.

N1 - Funding Information: Financial support for this work was provided by the Penn State University Center for Dielectric Studies and the National Science Foundation (DMR-0103354). Additional support was provided by The Commonwealth of Pennsylvania and by NSF through the Materials Research Science and Engineering Center Program (DMR-0080019 and DMR-0213623).

PY - 2006

Y1 - 2006

N2 - (00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTa O3 and ≤3.6% for AgNb O3. The tunability of the AgTa O3 film was 1.6% at 230 kVcm field, while 21% tunability was measured for AgNb O3 at 190 kVcm.

AB - (00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTa O3 and ≤3.6% for AgNb O3. The tunability of the AgTa O3 film was 1.6% at 230 kVcm field, while 21% tunability was measured for AgNb O3 at 190 kVcm.

UR - http://www.scopus.com/inward/record.url?scp=33845932290&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845932290&partnerID=8YFLogxK

U2 - 10.1063/1.2403918

DO - 10.1063/1.2403918

M3 - Article

AN - SCOPUS:33845932290

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252907

ER -

(00l) Epitaxial AgTaO₃ and AgNbO₃ thin films on (001)SrRuO₃/(001)LaAlO₃ substrates by chemical solution deposition

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this