(00l) Epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition

M. B. Telli; S. S.N. Bharadwaja; M. D. Biegalski; S. Trolier-Mckinstry

doi:10.1063/1.2403918

(00l) Epitaxial AgTaO₃ and AgNbO₃ thin films on (001)SrRuO₃/(001)LaAlO₃ substrates by chemical solution deposition

M. B. Telli, S. S.N. Bharadwaja, M. D. Biegalski, S. Trolier-Mckinstry

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Abstract

(00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTa O3 and ≤3.6% for AgNb O3. The tunability of the AgTa O3 film was 1.6% at 230 kVcm field, while 21% tunability was measured for AgNb O3 at 190 kVcm.

Original language	English (US)
Article number	252907
Journal	Applied Physics Letters
Volume	89
Issue number	25
DOIs	https://doi.org/10.1063/1.2403918
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2403918

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@article{419b87ccf82841ef937306228189ae2a,

title = "(00l) Epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition",

abstract = "(00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTa O3 and ≤3.6% for AgNb O3. The tunability of the AgTa O3 film was 1.6% at 230 kVcm field, while 21% tunability was measured for AgNb O3 at 190 kVcm.",

author = "Telli, {M. B.} and Bharadwaja, {S. S.N.} and Biegalski, {M. D.} and S. Trolier-Mckinstry",

note = "Funding Information: Financial support for this work was provided by the Penn State University Center for Dielectric Studies and the National Science Foundation (DMR-0103354). Additional support was provided by The Commonwealth of Pennsylvania and by NSF through the Materials Research Science and Engineering Center Program (DMR-0080019 and DMR-0213623).",

year = "2006",

doi = "10.1063/1.2403918",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

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TY - JOUR

T1 - (00l) Epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition

AU - Telli, M. B.

AU - Bharadwaja, S. S.N.

AU - Biegalski, M. D.

AU - Trolier-Mckinstry, S.

N1 - Funding Information: Financial support for this work was provided by the Penn State University Center for Dielectric Studies and the National Science Foundation (DMR-0103354). Additional support was provided by The Commonwealth of Pennsylvania and by NSF through the Materials Research Science and Engineering Center Program (DMR-0080019 and DMR-0213623).

PY - 2006

Y1 - 2006

N2 - (00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTa O3 and ≤3.6% for AgNb O3. The tunability of the AgTa O3 film was 1.6% at 230 kVcm field, while 21% tunability was measured for AgNb O3 at 190 kVcm.

AB - (00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTa O3 and ≤3.6% for AgNb O3. The tunability of the AgTa O3 film was 1.6% at 230 kVcm field, while 21% tunability was measured for AgNb O3 at 190 kVcm.

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DO - 10.1063/1.2403918

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SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252907

ER -

(00l) Epitaxial AgTaO₃ and AgNbO₃ thin films on (001)SrRuO₃/(001)LaAlO₃ substrates by chemical solution deposition

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