1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance

Rongming Chu; Andrea Corrion; Mary Chen; Ray Li; Danny Wong; Daniel Zehnder; Brian Hughes; Karim Boutros

doi:10.1109/LED.2011.2118190

1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance

Rongming Chu, Andrea Corrion, Mary Chen, Ray Li, Danny Wong, Daniel Zehnder, Brian Hughes, Karim Boutros

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

359 Scopus citations

Abstract

This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al₂O₃ gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple field plates, with one field plate connected to the gate electrode and two field plates connected to the source electrode successfully enabled a high breakdown voltage of 1200 V and low dynamic on-resistance at high-voltage operation.

Original language	English (US)
Article number	5735179
Pages (from-to)	632-634
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	5
DOIs	https://doi.org/10.1109/LED.2011.2118190
State	Published - May 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2011.2118190

Cite this

@article{074b2482326240e685cd22010ccacdc4,

title = "1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance",

abstract = "This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al2O3 gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple field plates, with one field plate connected to the gate electrode and two field plates connected to the source electrode successfully enabled a high breakdown voltage of 1200 V and low dynamic on-resistance at high-voltage operation.",

author = "Rongming Chu and Andrea Corrion and Mary Chen and Ray Li and Danny Wong and Daniel Zehnder and Brian Hughes and Karim Boutros",

year = "2011",

month = may,

doi = "10.1109/LED.2011.2118190",

language = "English (US)",

volume = "32",

pages = "632--634",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance

AU - Chu, Rongming

AU - Corrion, Andrea

AU - Chen, Mary

AU - Li, Ray

AU - Wong, Danny

AU - Zehnder, Daniel

AU - Hughes, Brian

AU - Boutros, Karim

PY - 2011/5

Y1 - 2011/5

N2 - This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al2O3 gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple field plates, with one field plate connected to the gate electrode and two field plates connected to the source electrode successfully enabled a high breakdown voltage of 1200 V and low dynamic on-resistance at high-voltage operation.

AB - This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al2O3 gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple field plates, with one field plate connected to the gate electrode and two field plates connected to the source electrode successfully enabled a high breakdown voltage of 1200 V and low dynamic on-resistance at high-voltage operation.

UR - http://www.scopus.com/inward/record.url?scp=79955537988&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955537988&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2118190

DO - 10.1109/LED.2011.2118190

M3 - Article

AN - SCOPUS:79955537988

SN - 0741-3106

VL - 32

SP - 632

EP - 634

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

M1 - 5735179

ER -

1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this