Abstract
This article reports GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed to achieve low contact resistance of $0.75~\Omega ~ \cdot ~mm$ , avoiding the risk of abnormally high contact resistance caused by inaccurate etch depth control. A pGaN notch formed near the cathode successfully eliminated excessive hole conduction caused by the sidewall n-ohmic contact. Isolation was improved by a high-energy Al implantation step. The resulting SHJ-SBD exhibited a breakdown voltage (BV) of 12.5 kV and a specific resistance of 100.8 $\text{m}\Omega ~ \cdot ~cm^{2}$.
Original language | English (US) |
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Pages (from-to) | 5736-5741 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 68 |
Issue number | 11 |
DOIs | |
State | Published - Nov 1 2021 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering