12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes

Keyphrases

• Schottky Barrier Diode 100%
• Ohmic Contact 66%
• Sidewall 66%
• High Energy 33%
• Contact Resistance 33%
• Performance Improvement 33%
• Breakdown Voltage 33%
• Etching Depth 33%
• Low Contact Resistance 33%
• Specific Resistance 33%
• Hole Conduction 33%
• P-GaN 33%
• Depth Control 33%

Engineering

• Etch Depth 33%