130 mA mm^-1β-Ga₂O₃metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts

Engineering & Materials Science

• Metallorganic vapor phase epitaxy 100%
• Ohmic contacts 85%
• Field effect transistors 60%
• Semiconductor materials 50%
• MESFET devices 46%
• Sheet resistance 39%
• Contact resistance 32%
• Demonstrations 23%
• Temperature 22%
• Heating 20%
• Metals 18%
• Hot Temperature 13%

Physics & Astronomy

• vapor phase epitaxy 59%
• electric contacts 50%
• field effect transistors 44%
• contact resistance 29%
• metals 29%
• high current 25%
• conductivity 18%
• electrical resistivity 17%
• heating 17%
• characterization 15%