15-nm channel length MoS2 FETs with single- and double-gate structures

A. Nourbakhsh, A. Zubair, S. Huang, X. Ling, M. S. Dresselhaus, J. Kong, S. De Gendt, T. Palacios

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Scopus citations


We demonstrate single- and double-gated (SG & DG) field effect transistors (FETs) with a record source-drain length (LS/D) of 15 nm built on monolayer (tch∼0.7 nm) and 4-layer (tch∼3 nm) MoS2 channels using monolayer graphene as the Source/Drain contacts. The best devices, corresponding to DG 4-layer MoS2-FETs with LS/D=15 nm, had an Ion/Ioff in excess of 106 and a minimum subthreshold swing (SSmin.) of 90 mV/dec. at VDS=0.5 V. At LS/D=1 μm and VDS=0.5 V, SSmin.=66 mV/dec., which is the best SS reported in MoS2 FETs, indicating the high quality of the interface and the enhanced channel electrostatics.

Original languageEnglish (US)
Title of host publication2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863485013
StatePublished - Aug 25 2015
EventSymposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan
Duration: Jun 16 2015Jun 18 2015

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562


OtherSymposium on VLSI Technology, VLSI Technology 2015

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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