193-nm lithography

Mordechai Rothschild, Anthony R. Forte, Mark W. Horn, Roderick R. Kunz, Susan C. Palmateer, Jan H.C. Sedlacek

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


The trend in microelectronics toward printing features 0.25 micrometers and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photoresist chemistries and processes. This paper reviews the current status of these various topics, as they have been engineered under a multi-year program at MIT Lincoln Laboratory.

Original languageEnglish (US)
Pages (from-to)398-404
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1996
EventLasers as Tools for Manufacturing of Durable Goods and Microelectronics - San Jose, CA, United States
Duration: Jan 29 1996Jan 29 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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