193-nm lithography

Mordechai Rothschild; Anthony R. Forte; Mark W. Horn; Roderick R. Kunz; Susan C. Palmateer; Jan H.C. Sedlacek

doi:10.1117/12.237751

193-nm lithography

Mordechai Rothschild, Anthony R. Forte, Mark W. Horn, Roderick R. Kunz, Susan C. Palmateer, Jan H.C. Sedlacek

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The trend in microelectronics toward printing features 0.25 micrometers and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photoresist chemistries and processes. This paper reviews the current status of these various topics, as they have been engineered under a multi-year program at MIT Lincoln Laboratory.

Original language	English (US)
Pages (from-to)	398-404
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2703
DOIs	https://doi.org/10.1117/12.237751
State	Published - 1996
Event	Lasers as Tools for Manufacturing of Durable Goods and Microelectronics - San Jose, CA, United States Duration: Jan 29 1996 → Jan 29 1996

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.237751

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@article{5160e253a2524ed3b76afbdfcf5cb742,

title = "193-nm lithography",

abstract = "The trend in microelectronics toward printing features 0.25 micrometers and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photoresist chemistries and processes. This paper reviews the current status of these various topics, as they have been engineered under a multi-year program at MIT Lincoln Laboratory.",

author = "Mordechai Rothschild and Forte, {Anthony R.} and Horn, {Mark W.} and Kunz, {Roderick R.} and Palmateer, {Susan C.} and Sedlacek, {Jan H.C.}",

year = "1996",

doi = "10.1117/12.237751",

language = "English (US)",

volume = "2703",

pages = "398--404",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Lasers as Tools for Manufacturing of Durable Goods and Microelectronics ; Conference date: 29-01-1996 Through 29-01-1996",

}

TY - JOUR

T1 - 193-nm lithography

AU - Rothschild, Mordechai

AU - Forte, Anthony R.

AU - Horn, Mark W.

AU - Kunz, Roderick R.

AU - Palmateer, Susan C.

AU - Sedlacek, Jan H.C.

PY - 1996

Y1 - 1996

N2 - The trend in microelectronics toward printing features 0.25 micrometers and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photoresist chemistries and processes. This paper reviews the current status of these various topics, as they have been engineered under a multi-year program at MIT Lincoln Laboratory.

AB - The trend in microelectronics toward printing features 0.25 micrometers and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photoresist chemistries and processes. This paper reviews the current status of these various topics, as they have been engineered under a multi-year program at MIT Lincoln Laboratory.

UR - http://www.scopus.com/inward/record.url?scp=0013224408&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0013224408&partnerID=8YFLogxK

U2 - 10.1117/12.237751

DO - 10.1117/12.237751

M3 - Conference article

AN - SCOPUS:0013224408

SN - 0277-786X

VL - 2703

SP - 398

EP - 404

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Lasers as Tools for Manufacturing of Durable Goods and Microelectronics

Y2 - 29 January 1996 through 29 January 1996

ER -

193-nm lithography

Abstract

All Science Journal Classification (ASJC) codes

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