Abstract
The trend in microelectronics toward printing features 0.25 μm and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photo-resist chemistries and processes. This paper reviews the current status of these various topics as they have been engineered under a multiyear program at MIT Lincoln Laboratory.
Original language | English (US) |
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Pages (from-to) | 916-923 |
Number of pages | 8 |
Journal | IEEE Journal of Selected Topics in Quantum Electronics |
Volume | 1 |
Issue number | 3 |
DOIs | |
State | Published - Sep 1995 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering