193-nm Lithography

Mordechai Rothschild; Anthony R. Forte; Mark W. Horn; Roderick R. Kunz; Susan C. Palmateer; Jan H.C. Sedlacek

doi:10.1109/2944.473679

193-nm Lithography

Mordechai Rothschild, Anthony R. Forte, Mark W. Horn, Roderick R. Kunz, Susan C. Palmateer, Jan H.C. Sedlacek

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The trend in microelectronics toward printing features 0.25 μm and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photo-resist chemistries and processes. This paper reviews the current status of these various topics as they have been engineered under a multiyear program at MIT Lincoln Laboratory.

Original language	English (US)
Pages (from-to)	916-923
Number of pages	8
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	1
Issue number	3
DOIs	https://doi.org/10.1109/2944.473679
State	Published - Sep 1995

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "193-nm Lithography",

abstract = "The trend in microelectronics toward printing features 0.25 μm and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photo-resist chemistries and processes. This paper reviews the current status of these various topics as they have been engineered under a multiyear program at MIT Lincoln Laboratory.",

author = "Mordechai Rothschild and Forte, {Anthony R.} and Horn, {Mark W.} and Kunz, {Roderick R.} and Palmateer, {Susan C.} and Sedlacek, {Jan H.C.}",

note = "Funding Information: Manuscript received June 14, 1995; revised July 13, 1995. This work was supported by the Advanced Research Projects Agency{\textquoteright}s Advanced Lithography Program. Opinions, interpretations, conclusions, and recommendations are those of the author and are not necessarily endorsed by the United States Air Force.",

year = "1995",

month = sep,

doi = "10.1109/2944.473679",

language = "English (US)",

volume = "1",

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TY - JOUR

T1 - 193-nm Lithography

AU - Rothschild, Mordechai

AU - Forte, Anthony R.

AU - Horn, Mark W.

AU - Kunz, Roderick R.

AU - Palmateer, Susan C.

AU - Sedlacek, Jan H.C.

N1 - Funding Information: Manuscript received June 14, 1995; revised July 13, 1995. This work was supported by the Advanced Research Projects Agency’s Advanced Lithography Program. Opinions, interpretations, conclusions, and recommendations are those of the author and are not necessarily endorsed by the United States Air Force.

PY - 1995/9

Y1 - 1995/9

N2 - The trend in microelectronics toward printing features 0.25 μm and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photo-resist chemistries and processes. This paper reviews the current status of these various topics as they have been engineered under a multiyear program at MIT Lincoln Laboratory.

AB - The trend in microelectronics toward printing features 0.25 μm and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photo-resist chemistries and processes. This paper reviews the current status of these various topics as they have been engineered under a multiyear program at MIT Lincoln Laboratory.

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193-nm Lithography

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