The trend in microelectronics toward printing features 0.25 μm and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photo-resist chemistries and processes. This paper reviews the current status of these various topics as they have been engineered under a multiyear program at MIT Lincoln Laboratory.
|Number of pages
|IEEE Journal of Selected Topics in Quantum Electronics
|Published - Sep 1995
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering