193 nm resists and lithography

Roderick R. Kunz; Robert D. Allen; Mark A. Hartney; William D. Hinsberg; Mark W. Horn; Craig L. Keast; Mordechai Rothschild; David C. Shaver; Gregory M. Wallraff

doi:10.1002/pat.1994.220050103

193 nm resists and lithography

Roderick R. Kunz, Robert D. Allen, Mark A. Hartney, William D. Hinsberg, Mark W. Horn, Craig L. Keast, Mordechai Rothschild, David C. Shaver, Gregory M. Wallraff

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1 Scopus citations

Abstract

A review of recent efforts to develop photoresist materials and processes for 193 nm (ArF excimer laser) photolithography is reported. Three categories of resist processes are discussed: (1) conventional single layer, (2) bilayer and (3) surface‐imaged resist processes. To date, materials have been developed for each process which exhibit resolution to less than 0.25 μm with sensitivities of less than 50 mJ/cm².

Original language	English (US)
Pages (from-to)	12-21
Number of pages	10
Journal	Polymers for Advanced Technologies
Volume	5
Issue number	1
DOIs	https://doi.org/10.1002/pat.1994.220050103
State	Published - Jan 1994

All Science Journal Classification (ASJC) codes

Polymers and Plastics

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10.1002/pat.1994.220050103

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title = "193 nm resists and lithography",

abstract = "A review of recent efforts to develop photoresist materials and processes for 193 nm (ArF excimer laser) photolithography is reported. Three categories of resist processes are discussed: (1) conventional single layer, (2) bilayer and (3) surface‐imaged resist processes. To date, materials have been developed for each process which exhibit resolution to less than 0.25 μm with sensitivities of less than 50 mJ/cm2.",

author = "Kunz, {Roderick R.} and Allen, {Robert D.} and Hartney, {Mark A.} and Hinsberg, {William D.} and Horn, {Mark W.} and Keast, {Craig L.} and Mordechai Rothschild and Shaver, {David C.} and Wallraff, {Gregory M.}",

year = "1994",

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language = "English (US)",

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AU - Kunz, Roderick R.

AU - Allen, Robert D.

AU - Hartney, Mark A.

AU - Hinsberg, William D.

AU - Horn, Mark W.

AU - Keast, Craig L.

AU - Rothschild, Mordechai

AU - Shaver, David C.

AU - Wallraff, Gregory M.

PY - 1994/1

Y1 - 1994/1

N2 - A review of recent efforts to develop photoresist materials and processes for 193 nm (ArF excimer laser) photolithography is reported. Three categories of resist processes are discussed: (1) conventional single layer, (2) bilayer and (3) surface‐imaged resist processes. To date, materials have been developed for each process which exhibit resolution to less than 0.25 μm with sensitivities of less than 50 mJ/cm2.

AB - A review of recent efforts to develop photoresist materials and processes for 193 nm (ArF excimer laser) photolithography is reported. Three categories of resist processes are discussed: (1) conventional single layer, (2) bilayer and (3) surface‐imaged resist processes. To date, materials have been developed for each process which exhibit resolution to less than 0.25 μm with sensitivities of less than 50 mJ/cm2.

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DO - 10.1002/pat.1994.220050103

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EP - 21

JO - Polymers for Advanced Technologies

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IS - 1

ER -

193 nm resists and lithography

Abstract

All Science Journal Classification (ASJC) codes

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