1/f noise in pentacene organic thin film transistors

P. V. Necliudov, S. L. Rumyantsev, M. S. Shur, D. J. Gundlach, T. N. Jackson

Research output: Contribution to journalArticlepeer-review

64 Scopus citations


We report on the flicker (1/f) noise in pentacene organic thin film transistors (TFTs) of different designs. Our studies show that the TFT design affects the noise level and the noise dependence on the gate- and drain-source biases. The measured noise level was the lowest for the TFTs with a top source and drain contacts design. For these devices, the noise dependence at low drain current values resembled that for n-type crystalline Si metal-oxide-semiconductor field-effect transistors. The extracted Hooge parameter α, which allows comparing the noise level in different devices and materials, was 0.045 for the top-contact TFTs. This parameter value is several orders of magnitude lower than that for conducting polymers and only several times higher than that for hydrogenated amorphous Si (α-Si:H) TFTs. The bottom source and drain contacts TFTs had a much higher noise level with a noise dependence on the terminal voltages that differed from the noise voltage dependence for the top-contact TFTs. The Hooge parameter values were in the range of 5-20 for the bottom-contact TFTs. We estimated that the contact noise could be comparable to the channel noise for both top-contact and bottom-contact TFTs.

Original languageEnglish (US)
Pages (from-to)5395-5399
Number of pages5
JournalJournal of Applied Physics
Issue number9
StatePublished - Nov 1 2000

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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