@inproceedings{9c6ebfa1637c445191638f6c27ae859d,
title = "2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors",
abstract = "The 2D Electrostrictive FET (2D EFET) is a steep switching device that operates on the principle of dynamic bandgap (Eo) modulation of 2D channel enabled by voltage induced strain transduction [1]. However, the steep switching comes with its own overheads such as increased capacitance. Further, 2D-EFETs offer distinct features, such as a back terminal with unique control of device characteristics. To overcome the limitations of 2D EFETs, their unique behavior needs to be judiciously capitalized. In this work, we propose a 2-Transistor Schmitt Trigger (ST) based on 2D-EFETs utilizing the dynamic EG reduction and the resultant drive strength modulation driven by VB. (Fig. 1). We show the significance of circuit-driven device optimization to enable 2D-EFET based ST employing just two transistors.",
author = "Niharika Thakuria and Daniel Schulmarr and Saptarshi Das and Gupta, {Sumeet Kumar}",
year = "2018",
month = aug,
day = "20",
doi = "10.1109/DRC.2018.8442149",
language = "English (US)",
isbn = "9781538630280",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2018 76th Device Research Conference, DRC 2018",
address = "United States",
note = "76th Device Research Conference, DRC 2018 ; Conference date: 24-06-2018 Through 27-06-2018",
}