2-Transistor schmitt trigger based on 2D electrostrictive field effect transistors

Niharika Thakuria, Daniel Schulmarr, Saptarshi Das, Sumeet Kumar Gupta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


The 2D Electrostrictive FET (2D EFET) is a steep switching device that operates on the principle of dynamic bandgap (Eo) modulation of 2D channel enabled by voltage induced strain transduction [1]. However, the steep switching comes with its own overheads such as increased capacitance. Further, 2D-EFETs offer distinct features, such as a back terminal with unique control of device characteristics. To overcome the limitations of 2D EFETs, their unique behavior needs to be judiciously capitalized. In this work, we propose a 2-Transistor Schmitt Trigger (ST) based on 2D-EFETs utilizing the dynamic EG reduction and the resultant drive strength modulation driven by VB. (Fig. 1). We show the significance of circuit-driven device optimization to enable 2D-EFET based ST employing just two transistors.

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538630280
StatePublished - Aug 20 2018
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other76th Device Research Conference, DRC 2018
Country/TerritoryUnited States
CitySanta Barbara

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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