23b. Growth characteristics and properties of Si and Si1-xGex nanowires

Pramod Nimmatoori; Qi Zhang; Xi Zhang; Elizabeth C. Dickey; Joan M. Redwing

23b. Growth characteristics and properties of Si and Si_1-xGe_x nanowires

Pramod Nimmatoori, Qi Zhang, Xi Zhang, Elizabeth C. Dickey, Joan M. Redwing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting
Publisher	AIChE
Pages	26-32
Number of pages	7
ISBN (Electronic)	9781605602257
State	Published - 2008
Event	Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting - New Orleans, United States Duration: Apr 6 2008 → Apr 10 2008

Publication series

Name	Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting

Other

Other	Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting
Country/Territory	United States
City	New Orleans
Period	4/6/08 → 4/10/08

All Science Journal Classification (ASJC) codes

Materials Chemistry
Environmental Engineering
General Chemical Engineering
General Engineering

Cite this

Nimmatoori, P., Zhang, Q., Zhang, X., Dickey, E. C., & Redwing, J. M. (2008). 23b. Growth characteristics and properties of Si and Si_1-xGe_x nanowires. In Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting (pp. 26-32). (Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting). AIChE.

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title = "23b. Growth characteristics and properties of Si and Si1-xGex nanowires",

author = "Pramod Nimmatoori and Qi Zhang and Xi Zhang and Dickey, {Elizabeth C.} and Redwing, {Joan M.}",

year = "2008",

language = "English (US)",

series = "Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting",

publisher = "AIChE",

pages = "26--32",

booktitle = "Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting",

note = "Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting ; Conference date: 06-04-2008 Through 10-04-2008",

}

Nimmatoori, P, Zhang, Q, Zhang, X, Dickey, EC & Redwing, JM 2008, 23b. Growth characteristics and properties of Si and Si_1-xGe_x nanowires. in Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting. Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting, AIChE, pp. 26-32, Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting, New Orleans, United States, 4/6/08.

23b. Growth characteristics and properties of Si and Si_1-xGe_x nanowires. / Nimmatoori, Pramod; Zhang, Qi; Zhang, Xi et al.
Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting. AIChE, 2008. p. 26-32 (Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Dickey, Elizabeth C.

AU - Redwing, Joan M.

PY - 2008

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T3 - Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting

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BT - Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting

PB - AIChE

T2 - Nanoscale Science and Engineering Forum Conference, Presentations at the 2008 AIChE Spring National Meeting

Y2 - 6 April 2008 through 10 April 2008

ER -