Abstract
An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P1dB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.
Original language | English (US) |
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Title of host publication | 2015 IEEE International Electron Devices Meeting, IEDM 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 9.3.1-9.3.4 |
Volume | 2016-February |
ISBN (Electronic) | 9781467398930 |
DOIs | |
State | Published - Feb 16 2016 |
Event | 61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: Dec 7 2015 → Dec 9 2015 |
Other
Other | 61st IEEE International Electron Devices Meeting, IEDM 2015 |
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Country/Territory | United States |
City | Washington |
Period | 12/7/15 → 12/9/15 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering