26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer

H. Madan; H. T. Zhang; M. Jerry; D. Mukherjee; Nasim Alem; Roman Engel-Herbert; S. Datta

doi:10.1109/IEDM.2015.7409661

26.5 Terahertz electrically triggered RF switch on epitaxial VO₂-on-Sapphire (VOS) wafer

H. Madan
, H. T. Zhang
, M. Jerry
, D. Mukherjee
, Nasim Alem
, Roman Engel-Herbert
, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

32 Scopus citations

Abstract

An electrically triggered VO₂ RF switch with a record switching cut off frequency (F_CO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P_1dB) better than 12dBm and output third-order intercept point (OIP₃) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO₂ enables the switch to have an electrical-turn on delay of less than 25ns.

Original language	English (US)
Title of host publication	2015 IEEE International Electron Devices Meeting, IEDM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	9.3.1-9.3.4
Volume	2016-February
ISBN (Electronic)	9781467398930
DOIs	https://doi.org/10.1109/IEDM.2015.7409661
State	Published - Feb 16 2016
Event	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: Dec 7 2015 → Dec 9 2015

Other

Other	61st IEEE International Electron Devices Meeting, IEDM 2015
Country/Territory	United States
City	Washington
Period	12/7/15 → 12/9/15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1109/IEDM.2015.7409661

Cite this

Madan, H., Zhang, H. T., Jerry, M., Mukherjee, D., Alem, N., Engel-Herbert, R., & Datta, S. (2016). 26.5 Terahertz electrically triggered RF switch on epitaxial VO₂-on-Sapphire (VOS) wafer. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (Vol. 2016-February, pp. 9.3.1-9.3.4). Article 7409661 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409661

@inproceedings{724dd21242cb49e98f32f0129bf4f95f,

title = "26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer",

abstract = "An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P1dB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.",

author = "H. Madan and Zhang, \{H. T.\} and M. Jerry and D. Mukherjee and Nasim Alem and Roman Engel-Herbert and S. Datta",

year = "2016",

month = feb,

day = "16",

doi = "10.1109/IEDM.2015.7409661",

language = "English (US)",

volume = "2016-February",

pages = "9.3.1--9.3.4",

booktitle = "2015 IEEE International Electron Devices Meeting, IEDM 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference date: 07-12-2015 Through 09-12-2015",

}

Madan, H, Zhang, HT, Jerry, M, Mukherjee, D, Alem, N, Engel-Herbert, R & Datta, S 2016, 26.5 Terahertz electrically triggered RF switch on epitaxial VO₂-on-Sapphire (VOS) wafer. in 2015 IEEE International Electron Devices Meeting, IEDM 2015. vol. 2016-February, 7409661, Institute of Electrical and Electronics Engineers Inc., pp. 9.3.1-9.3.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 12/7/15. https://doi.org/10.1109/IEDM.2015.7409661

26.5 Terahertz electrically triggered RF switch on epitaxial VO₂-on-Sapphire (VOS) wafer. / Madan, H.; Zhang, H. T.; Jerry, M. et al.
2015 IEEE International Electron Devices Meeting, IEDM 2015. Vol. 2016-February Institute of Electrical and Electronics Engineers Inc., 2016. p. 9.3.1-9.3.4 7409661.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - 26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer

AU - Madan, H.

AU - Zhang, H. T.

AU - Jerry, M.

AU - Mukherjee, D.

AU - Alem, Nasim

AU - Engel-Herbert, Roman

AU - Datta, S.

PY - 2016/2/16

Y1 - 2016/2/16

N2 - An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P1dB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.

AB - An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P1dB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.

UR - https://www.scopus.com/pages/publications/84964000573

UR - https://www.scopus.com/pages/publications/84964000573#tab=citedBy

U2 - 10.1109/IEDM.2015.7409661

DO - 10.1109/IEDM.2015.7409661

M3 - Conference contribution

AN - SCOPUS:84964000573

VL - 2016-February

SP - 9.3.1-9.3.4

BT - 2015 IEEE International Electron Devices Meeting, IEDM 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 61st IEEE International Electron Devices Meeting, IEDM 2015

Y2 - 7 December 2015 through 9 December 2015

ER -