2D Boron Nitride: Synthesis and Applications

G. R. Bhimanapati, N. R. Glavin, J. A. Robinson

Research output: Chapter in Book/Report/Conference proceedingChapter

107 Scopus citations


Hexagonal boron nitride (h-BN), a layered material isostructural to graphite, has similar exotic properties like graphite. With single atom thick and alternating boron and nitrogen atoms in its atomic structure, h-BN is an insulator with band gap ~ 5.9 eV. As monolayer h-BN or boron nitride nanosheet (BNNS) has been studied for over a decade, a brief overview about the structure and stability is provided. In addition, this chapter provides insight into the different forms of h-BN focusing mainly on the synthesis of single layer h-BN or BNNS via different techniques such as mechanical exfoliation, solvent exfoliation, and chemical vapor deposition. Along with BNNS, h-BN nanoribbon synthesis is also presented as it follows a similar approach to BNNS. As h-BN is the insulating isostructure to graphene, use of h-BN in some of the major applications such as coatings, dielectric, and some device applications are also discussed.

Original languageEnglish (US)
Title of host publicationSemiconductors and Semimetals
PublisherAcademic Press Inc.
Number of pages47
StatePublished - 2016

Publication series

NameSemiconductors and Semimetals
ISSN (Print)0080-8784

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of '2D Boron Nitride: Synthesis and Applications'. Together they form a unique fingerprint.

Cite this