TY - JOUR
T1 - 2D Materials for Universal Thermal Imaging of Micro- and Nanodevices
T2 - An Application to Gallium Oxide Electronics
AU - Lundh, James Spencer
AU - Zhang, Tianyi
AU - Zhang, Yuewei
AU - Xia, Zhanbo
AU - Wetherington, Maxwell
AU - Lei, Yu
AU - Kahn, Ethan
AU - Rajan, Siddharth
AU - Terrones, Mauricio
AU - Choi, Sukwon
N1 - Funding Information:
Work by J.S.L. and S.C. was supported by the Air Force Office of Scientific Research (AFOSR) Young Investigator Program (Grant FA9550-17-1-0141, Program Officers: Dr. Brett Pokines and Dr. Michael Kendra, also monitored by Dr. Kenneth Goretta) and the Penn State Center for Security Research and Education (CSRE) Seed Grant Program. M.T., T.Z., Y.L., and E.K. thank AFOSR through Grant FA9550-18-1-0072 and the NSF-IUCRC Center for Atomically Thin Multifunctional Coatings (ATOMIC).
Publisher Copyright:
Copyright © 2020 American Chemical Society.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2020/9/22
Y1 - 2020/9/22
N2 - We highlight the flexibility of two-dimensional (2D) materials for advancing current technologies through the introduction of 2D Raman thermography (2DRT). 2DRT combines monolayer materials and Raman spectroscopy to perform thermal imaging of micro- and nanodevices. In contrast to peak shift and line width based methods for Raman thermal analysis, 2DRT uses the anti-Stokes/Stokes intensity ratio which is only sensitive to temperature. To demonstrate the technique, monolayer molybdenum disulfide (MoS2) was transferred to the surface of devices based on β-gallium oxide (Ga2O3), an emerging ultrawide-bandgap semiconductor for high-frequency and high-power applications. The validation of the technique was performed on an (AlGa)2O3/Ga2O3 modulation-doped field effect transistor by using nanoparticle-assisted Raman thermometry. The peak operating temperature, a critical device performance metric, is underestimated by ∼30% by using standard Raman thermometry when compared to 2DRT. Finally, the 2D thermal imaging capabilities of 2DRT were demonstrated on an (AlGa)2O3/Ga2O3 transmission line measurement structure.
AB - We highlight the flexibility of two-dimensional (2D) materials for advancing current technologies through the introduction of 2D Raman thermography (2DRT). 2DRT combines monolayer materials and Raman spectroscopy to perform thermal imaging of micro- and nanodevices. In contrast to peak shift and line width based methods for Raman thermal analysis, 2DRT uses the anti-Stokes/Stokes intensity ratio which is only sensitive to temperature. To demonstrate the technique, monolayer molybdenum disulfide (MoS2) was transferred to the surface of devices based on β-gallium oxide (Ga2O3), an emerging ultrawide-bandgap semiconductor for high-frequency and high-power applications. The validation of the technique was performed on an (AlGa)2O3/Ga2O3 modulation-doped field effect transistor by using nanoparticle-assisted Raman thermometry. The peak operating temperature, a critical device performance metric, is underestimated by ∼30% by using standard Raman thermometry when compared to 2DRT. Finally, the 2D thermal imaging capabilities of 2DRT were demonstrated on an (AlGa)2O3/Ga2O3 transmission line measurement structure.
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U2 - 10.1021/acsaelm.0c00574
DO - 10.1021/acsaelm.0c00574
M3 - Article
AN - SCOPUS:85093659182
SN - 2637-6113
VL - 2
SP - 2945
EP - 2953
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 9
ER -