@inproceedings{4291b2f167ee46f79520b5dab1e77c8e,
title = "3C-SIC films grown on Si(111) substrates as a template for graphene epitaxy",
abstract = "High quality (111) oriented SiC films were grown Si(111 substrates using a low temperature halogen-based process. The goal of this work was to produce SiC films with a high crystal quality and very low surface roughness for subsequent epitaxial growth of graphene films. SiC films with narrow x-ray diffraction peak widths and surface roughnesses less than 1nm were grown while avoiding common processing defects such as voids at the substrate-film interface.",
author = "Fanton, {M. A.} and Robinson, {J. A.} and Weiland, {B. E.} and J. Moon",
year = "2009",
doi = "10.1149/1.3119537",
language = "English (US)",
isbn = "9781566777131",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "131--135",
booktitle = "ECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications",
edition = "5",
note = "1st International Symposium on Emerging Materials for Post-CMOS Applications - 215th Meeting of the Electrochemical Society ; Conference date: 25-05-2009 Through 29-05-2009",
}