3D Vertical Glass Stacking for 6G Communications - Interconnect Fabrication and Broadband Characterization

Xingchen Li; Lakshmi Narasimha Vijay Kumar; Madhavan Swaminathan

doi:10.1109/ECTC51687.2025.00242

3D Vertical Glass Stacking for 6G Communications - Interconnect Fabrication and Broadband Characterization

Xingchen Li
, Lakshmi Narasimha Vijay Kumar
, Madhavan Swaminathan

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

With the development of 6 G communications in sub-THz bands, 3D heterogeneous integration (3DHI) becomes necessary for massive array integration. This work proposes a 3DHI architecture that features multi-layer glass tiers to support vertical stacking of front-end chips, and characterizes the broadband loss for interlayer interconnect transition. For the first time, the process of polymer-assisted glass substrate bonding and vertical through-glass-via (TGV) are proposed and demonstrated. With the challenges of alignment and via-in-via drilling addressed, the fabricated sample has been measured from DC-220 GHz and shows 0.3 dB transition loss at 200 GHz. Panel-level warpage of the sample is also presented in the paper.

Original language	English (US)
Title of host publication	Proceedings - IEEE 75th Electronic Components and Technology Conference, ECTC 2025
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1412-1416
Number of pages	5
ISBN (Electronic)	9798331539320
DOIs	https://doi.org/10.1109/ECTC51687.2025.00242
State	Published - 2025
Event	75th IEEE Electronic Components and Technology Conference, ECTC 2025 - Dallas, United States Duration: May 27 2025 → May 30 2025

Publication series

Name	Proceedings - Electronic Components and Technology Conference
ISSN (Print)	0569-5503

Conference

Conference	75th IEEE Electronic Components and Technology Conference, ECTC 2025
Country/Territory	United States
City	Dallas
Period	5/27/25 → 5/30/25

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ECTC51687.2025.00242

Cite this

Li, X., Kumar, L. N. V., & Swaminathan, M. (2025). 3D Vertical Glass Stacking for 6G Communications - Interconnect Fabrication and Broadband Characterization. In Proceedings - IEEE 75th Electronic Components and Technology Conference, ECTC 2025 (pp. 1412-1416). (Proceedings - Electronic Components and Technology Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC51687.2025.00242

Li, Xingchen ; Kumar, Lakshmi Narasimha Vijay ; Swaminathan, Madhavan. / 3D Vertical Glass Stacking for 6G Communications - Interconnect Fabrication and Broadband Characterization. Proceedings - IEEE 75th Electronic Components and Technology Conference, ECTC 2025. Institute of Electrical and Electronics Engineers Inc., 2025. pp. 1412-1416 (Proceedings - Electronic Components and Technology Conference).

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title = "3D Vertical Glass Stacking for 6G Communications - Interconnect Fabrication and Broadband Characterization",

abstract = "With the development of 6 G communications in sub-THz bands, 3D heterogeneous integration (3DHI) becomes necessary for massive array integration. This work proposes a 3DHI architecture that features multi-layer glass tiers to support vertical stacking of front-end chips, and characterizes the broadband loss for interlayer interconnect transition. For the first time, the process of polymer-assisted glass substrate bonding and vertical through-glass-via (TGV) are proposed and demonstrated. With the challenges of alignment and via-in-via drilling addressed, the fabricated sample has been measured from DC-220 GHz and shows 0.3 dB transition loss at 200 GHz. Panel-level warpage of the sample is also presented in the paper.",

author = "Xingchen Li and Kumar, \{Lakshmi Narasimha Vijay\} and Madhavan Swaminathan",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 75th IEEE Electronic Components and Technology Conference, ECTC 2025 ; Conference date: 27-05-2025 Through 30-05-2025",

year = "2025",

doi = "10.1109/ECTC51687.2025.00242",

language = "English (US)",

series = "Proceedings - Electronic Components and Technology Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1412--1416",

booktitle = "Proceedings - IEEE 75th Electronic Components and Technology Conference, ECTC 2025",

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Li, X, Kumar, LNV & Swaminathan, M 2025, 3D Vertical Glass Stacking for 6G Communications - Interconnect Fabrication and Broadband Characterization. in Proceedings - IEEE 75th Electronic Components and Technology Conference, ECTC 2025. Proceedings - Electronic Components and Technology Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1412-1416, 75th IEEE Electronic Components and Technology Conference, ECTC 2025, Dallas, United States, 5/27/25. https://doi.org/10.1109/ECTC51687.2025.00242

3D Vertical Glass Stacking for 6G Communications - Interconnect Fabrication and Broadband Characterization. / Li, Xingchen; Kumar, Lakshmi Narasimha Vijay; Swaminathan, Madhavan.
Proceedings - IEEE 75th Electronic Components and Technology Conference, ECTC 2025. Institute of Electrical and Electronics Engineers Inc., 2025. p. 1412-1416 (Proceedings - Electronic Components and Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - 3D Vertical Glass Stacking for 6G Communications - Interconnect Fabrication and Broadband Characterization

AU - Li, Xingchen

AU - Kumar, Lakshmi Narasimha Vijay

AU - Swaminathan, Madhavan

PY - 2025

Y1 - 2025

N2 - With the development of 6 G communications in sub-THz bands, 3D heterogeneous integration (3DHI) becomes necessary for massive array integration. This work proposes a 3DHI architecture that features multi-layer glass tiers to support vertical stacking of front-end chips, and characterizes the broadband loss for interlayer interconnect transition. For the first time, the process of polymer-assisted glass substrate bonding and vertical through-glass-via (TGV) are proposed and demonstrated. With the challenges of alignment and via-in-via drilling addressed, the fabricated sample has been measured from DC-220 GHz and shows 0.3 dB transition loss at 200 GHz. Panel-level warpage of the sample is also presented in the paper.

AB - With the development of 6 G communications in sub-THz bands, 3D heterogeneous integration (3DHI) becomes necessary for massive array integration. This work proposes a 3DHI architecture that features multi-layer glass tiers to support vertical stacking of front-end chips, and characterizes the broadband loss for interlayer interconnect transition. For the first time, the process of polymer-assisted glass substrate bonding and vertical through-glass-via (TGV) are proposed and demonstrated. With the challenges of alignment and via-in-via drilling addressed, the fabricated sample has been measured from DC-220 GHz and shows 0.3 dB transition loss at 200 GHz. Panel-level warpage of the sample is also presented in the paper.

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M3 - Conference contribution

AN - SCOPUS:105010623552

T3 - Proceedings - Electronic Components and Technology Conference

SP - 1412

EP - 1416

BT - Proceedings - IEEE 75th Electronic Components and Technology Conference, ECTC 2025

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Li X, Kumar LNV, Swaminathan M. 3D Vertical Glass Stacking for 6G Communications - Interconnect Fabrication and Broadband Characterization. In Proceedings - IEEE 75th Electronic Components and Technology Conference, ECTC 2025. Institute of Electrical and Electronics Engineers Inc. 2025. p. 1412-1416. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC51687.2025.00242

3D Vertical Glass Stacking for 6G Communications - Interconnect Fabrication and Broadband Characterization

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