Abstract
This letter reports a GaN vertical trench metal-oxide-semiconductor field-effect transistor (MOSFET) with normally-off operation. Selective area regrowth of n+- GaN source layer was performed to avoid plasma etch damage to the p-GaN body contact region. A metal-organic-chemicalvapor- deposition (MOCVD) grown AlN/SiN dielectric stack was employed as the gate "oxide". This unique process yielded a 0.5-mm2-active-area transistor with threshold voltage of 4.8 V, blocking voltage of 600 V at gate bias of 0 V, and on-resistance of 1.7 Ω at gate bias of 10 V.
Original language | English (US) |
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Article number | 7586076 |
Pages (from-to) | 1466-1469 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 37 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2016 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering