61.1: Invited paper: ZnO thin film transistors and circuits on flexible polymeric substrates by low-temperature PEALD

Dalong A. Zhao; Devin A. Mourey; Ho Him R. Fok; Yuanyuan V. Li; Thomas Nelson Jackson

61.1: Invited paper: ZnO thin film transistors and circuits on flexible polymeric substrates by low-temperature PEALD

Dalong A. Zhao, Devin A. Mourey, Ho Him R. Fok, Yuanyuan V. Li, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process at 200°C to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal semiconductor and dielectric layers and enhancement-mode MOSFETs from uncompensated films. Highly conformal PEALD Al₂O₃layers provide a high yield dielectric on rough plastic substrates for both PEALD ZnO TFTs and cross-overs. Our PEALD ZnO TFTs have field-effect mobility of >20 cm²/V-s on polyimide substrates with excellent bias stress stability. TFTs biased continuously for 40,000s showed <50 mV threshold voltage shift. We also report fast PEALD ZnO circuits on polyimide substrates with propagation delay <20 ns/stage for V _DD = 18 V.

Original language	English (US)
Title of host publication	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages	909-912
Number of pages	4
Volume	2
State	Published - Dec 1 2010
Event	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States Duration: May 23 2010 → May 28 2010

Other

Other	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Country/Territory	United States
City	Seattle, WA
Period	5/23/10 → 5/28/10

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Information Systems

Cite this

@inproceedings{b9e630c501824c859fd1a2aebc4654df,

title = "61.1: Invited paper: ZnO thin film transistors and circuits on flexible polymeric substrates by low-temperature PEALD",

abstract = "We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process at 200°C to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal semiconductor and dielectric layers and enhancement-mode MOSFETs from uncompensated films. Highly conformal PEALD Al2O3layers provide a high yield dielectric on rough plastic substrates for both PEALD ZnO TFTs and cross-overs. Our PEALD ZnO TFTs have field-effect mobility of >20 cm2/V-s on polyimide substrates with excellent bias stress stability. TFTs biased continuously for 40,000s showed <50 mV threshold voltage shift. We also report fast PEALD ZnO circuits on polyimide substrates with propagation delay <20 ns/stage for V DD = 18 V.",

author = "Zhao, {Dalong A.} and Mourey, {Devin A.} and Fok, {Ho Him R.} and Li, {Yuanyuan V.} and Jackson, {Thomas Nelson}",

year = "2010",

month = dec,

day = "1",

language = "English (US)",

isbn = "9781618390950",

volume = "2",

pages = "909--912",

booktitle = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",

note = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 ; Conference date: 23-05-2010 Through 28-05-2010",

}

Zhao, DA, Mourey, DA, Fok, HHR, Li, YV & Jackson, TN 2010, 61.1: Invited paper: ZnO thin film transistors and circuits on flexible polymeric substrates by low-temperature PEALD. in 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. vol. 2, pp. 909-912, 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, Seattle, WA, United States, 5/23/10.

TY - GEN

T1 - 61.1

T2 - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

AU - Zhao, Dalong A.

AU - Mourey, Devin A.

AU - Fok, Ho Him R.

AU - Li, Yuanyuan V.

AU - Jackson, Thomas Nelson

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process at 200°C to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal semiconductor and dielectric layers and enhancement-mode MOSFETs from uncompensated films. Highly conformal PEALD Al2O3layers provide a high yield dielectric on rough plastic substrates for both PEALD ZnO TFTs and cross-overs. Our PEALD ZnO TFTs have field-effect mobility of >20 cm2/V-s on polyimide substrates with excellent bias stress stability. TFTs biased continuously for 40,000s showed <50 mV threshold voltage shift. We also report fast PEALD ZnO circuits on polyimide substrates with propagation delay <20 ns/stage for V DD = 18 V.

AB - We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process at 200°C to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal semiconductor and dielectric layers and enhancement-mode MOSFETs from uncompensated films. Highly conformal PEALD Al2O3layers provide a high yield dielectric on rough plastic substrates for both PEALD ZnO TFTs and cross-overs. Our PEALD ZnO TFTs have field-effect mobility of >20 cm2/V-s on polyimide substrates with excellent bias stress stability. TFTs biased continuously for 40,000s showed <50 mV threshold voltage shift. We also report fast PEALD ZnO circuits on polyimide substrates with propagation delay <20 ns/stage for V DD = 18 V.

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M3 - Conference contribution

AN - SCOPUS:80755169735

SN - 9781618390950

VL - 2

SP - 909

EP - 912

BT - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

Y2 - 23 May 2010 through 28 May 2010

ER -

61.1: Invited paper: ZnO thin film transistors and circuits on flexible polymeric substrates by low-temperature PEALD

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All Science Journal Classification (ASJC) codes

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