8.85-kV/0.72-A Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode

Sang Woo Han, Mansura Sadek, Jesse T. Kemmerling, Rian Guan, Rongming Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper studies charge-balance effects in GaN super-heterojunction Schottky barrier diodes. Improvement in charge-balance design resulted in the highest average E-field of 140 V/m, scalable to over 10 kV. Large-periphery devices were fabricated, yielding an output current of 0.72 A, a breakdown voltage of 8.85 kV, and RONCO(tr) product of 6 ps. Forming a p-type ohmic contact eliminated dynamic on-resistance degradation from 1000X at 500 V to 2X at 3 kV.

Original languageEnglish (US)
Title of host publication6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages119-121
Number of pages3
ISBN (Electronic)9781665421775
DOIs
StatePublished - 2022
Event6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan
Duration: Mar 6 2022Mar 9 2022

Publication series

Name6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Country/TerritoryJapan
CityVirtual, Online
Period3/6/223/9/22

All Science Journal Classification (ASJC) codes

  • Process Chemistry and Technology
  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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