TY - GEN
T1 - 8.85-kV/0.72-A Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode
AU - Han, Sang Woo
AU - Sadek, Mansura
AU - Kemmerling, Jesse T.
AU - Guan, Rian
AU - Chu, Rongming
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - This paper studies charge-balance effects in GaN super-heterojunction Schottky barrier diodes. Improvement in charge-balance design resulted in the highest average E-field of 140 V/m, scalable to over 10 kV. Large-periphery devices were fabricated, yielding an output current of 0.72 A, a breakdown voltage of 8.85 kV, and RONCO(tr) product of 6 ps. Forming a p-type ohmic contact eliminated dynamic on-resistance degradation from 1000X at 500 V to 2X at 3 kV.
AB - This paper studies charge-balance effects in GaN super-heterojunction Schottky barrier diodes. Improvement in charge-balance design resulted in the highest average E-field of 140 V/m, scalable to over 10 kV. Large-periphery devices were fabricated, yielding an output current of 0.72 A, a breakdown voltage of 8.85 kV, and RONCO(tr) product of 6 ps. Forming a p-type ohmic contact eliminated dynamic on-resistance degradation from 1000X at 500 V to 2X at 3 kV.
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U2 - 10.1109/EDTM53872.2022.9798119
DO - 10.1109/EDTM53872.2022.9798119
M3 - Conference contribution
AN - SCOPUS:85133956304
T3 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
SP - 119
EP - 121
BT - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Y2 - 6 March 2022 through 9 March 2022
ER -