TY - GEN
T1 - A 10 GHz Single-Crystalline Scandium-Doped Aluminum Nitride Lamb-Wave Resonator
AU - Park, Mingyo
AU - Hao, Zhijian
AU - Kim, Dea Gyu
AU - Clark, Andrew
AU - Dargis, Rytis
AU - Ansari, Azadeh
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - This work reports on the first demonstration of Lamb-wave resonators based on single-crystalline Scandium (Sc)-doped Aluminum Nitride (AlN) films operating at 8-10 GHz. Sc-AlN and AlN films are grown on Silicon substrates using molecular beam epitaxy (MBE). The electrodes are defined using electron beam lithography with sub-micron feature sizes to maximize the electromechanical coupling coefficient(k-t2). A high k-t2 value of 4.8 % is reported at 9.9 GHz, with unloaded Quality factor (Qm) of 185, yielding f \times {Q-m} \times k-t2 values of 74 GHz. The high k-t2 is attributed to enhanced piezoelectric coefficients achieved due to single crystallinity, as well as Sc-doping. This work demonstrates higher performance resonators achieved by using single-crystalline Sc-AlN thin films compared to sputter-deposited films with sub-micron thicknesses, required for 5G filter applications.
AB - This work reports on the first demonstration of Lamb-wave resonators based on single-crystalline Scandium (Sc)-doped Aluminum Nitride (AlN) films operating at 8-10 GHz. Sc-AlN and AlN films are grown on Silicon substrates using molecular beam epitaxy (MBE). The electrodes are defined using electron beam lithography with sub-micron feature sizes to maximize the electromechanical coupling coefficient(k-t2). A high k-t2 value of 4.8 % is reported at 9.9 GHz, with unloaded Quality factor (Qm) of 185, yielding f \times {Q-m} \times k-t2 values of 74 GHz. The high k-t2 is attributed to enhanced piezoelectric coefficients achieved due to single crystallinity, as well as Sc-doping. This work demonstrates higher performance resonators achieved by using single-crystalline Sc-AlN thin films compared to sputter-deposited films with sub-micron thicknesses, required for 5G filter applications.
UR - http://www.scopus.com/inward/record.url?scp=85067016898&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85067016898&partnerID=8YFLogxK
U2 - 10.1109/TRANSDUCERS.2019.8808374
DO - 10.1109/TRANSDUCERS.2019.8808374
M3 - Conference contribution
AN - SCOPUS:85067016898
T3 - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
SP - 450
EP - 453
BT - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
Y2 - 23 June 2019 through 27 June 2019
ER -