TY - JOUR
T1 - A 114-126-GHz Frequency Doubler With >10 dBm Output Power and >12% Efficiency in 45 nm RFSOI
AU - Abbasi, Mohammadreza
AU - Thapliyal, Tanya
AU - Mohammad Ashab Uddin, Syed
AU - Lee, Wooram
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2024
Y1 - 2024
N2 - This letter presents a D-band frequency doubler integrated with a power amplifier to achieve high output power and efficiency in 45 nm RFSOI. The proposed frequency doubler generates a broadband fully differential output by extracting the second-order harmonic from the shared source and drain nodes of a push-push differential pair and amplifying it through a common gate (CG) stage. The power amplifier exploits a novel device, the ADNFET developed by GlobalFoundries, which exhibits improved breakdown voltage for higher output power and efficiency. The fabricated IC integrates the proposed frequency doubler and power amplifier and reports the measured saturation output power greater than 10 dBm (11.7 dBm at 116 GHz) with a peak drain efficiency higher than 12% (15% at 116 GHz) from 114 to 126 GHz.
AB - This letter presents a D-band frequency doubler integrated with a power amplifier to achieve high output power and efficiency in 45 nm RFSOI. The proposed frequency doubler generates a broadband fully differential output by extracting the second-order harmonic from the shared source and drain nodes of a push-push differential pair and amplifying it through a common gate (CG) stage. The power amplifier exploits a novel device, the ADNFET developed by GlobalFoundries, which exhibits improved breakdown voltage for higher output power and efficiency. The fabricated IC integrates the proposed frequency doubler and power amplifier and reports the measured saturation output power greater than 10 dBm (11.7 dBm at 116 GHz) with a peak drain efficiency higher than 12% (15% at 116 GHz) from 114 to 126 GHz.
UR - https://www.scopus.com/pages/publications/85203642713
UR - https://www.scopus.com/pages/publications/85203642713#tab=citedBy
U2 - 10.1109/LMWT.2024.3424729
DO - 10.1109/LMWT.2024.3424729
M3 - Article
AN - SCOPUS:85203642713
SN - 2771-957X
VL - 34
SP - 1107
EP - 1110
JO - IEEE Microwave and Wireless Technology Letters
JF - IEEE Microwave and Wireless Technology Letters
IS - 9
ER -