A 24–30 GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS

Chihiro Kamidaki; Yuma Okuyama; Tatsuo Kubo; Wooram Lee; Caglar Ozdag; Bodhisatwa Sadhu; Yo Yamaguchi; Ning Guan

doi:10.1587/transele.2023MMI0003

A 24–30 GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS

Chihiro Kamidaki, Yuma Okuyama, Tatsuo Kubo, Wooram Lee, Caglar Ozdag, Bodhisatwa Sadhu, Yo Yamaguchi, Ning Guan

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 130-nm SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a low-loss transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25–29.5 GHz. Measurements of the front-end in TX mode demonstrate peak S21 of 30.3 dB at 26.7 GHz, S21 3-dB bandwidth of 9.8 GHz from 22.2 to 32.0 GHz, and saturated output power (Psat) above 20 dBm with power-added efficiency (PAE) above 22% from 24 to 30 GHz. For a 64-QAM 400 MHz bandwidth orthogonal frequency division multiplexing (OFDM) signal, −25 dBc error vector magnitude (EVM) is measured at an average output power of 12.3 dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.

Original language	English (US)
Pages (from-to)	625-634
Number of pages	10
Journal	IEICE Transactions on Electronics
Volume	E106.C
Issue number	11
DOIs	https://doi.org/10.1587/transele.2023MMI0003
State	Published - Nov 2023

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1587/transele.2023MMI0003

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title = "A 24–30 GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS",

abstract = "This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 130-nm SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a low-loss transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25–29.5 GHz. Measurements of the front-end in TX mode demonstrate peak S21 of 30.3 dB at 26.7 GHz, S21 3-dB bandwidth of 9.8 GHz from 22.2 to 32.0 GHz, and saturated output power (Psat) above 20 dBm with power-added efficiency (PAE) above 22% from 24 to 30 GHz. For a 64-QAM 400 MHz bandwidth orthogonal frequency division multiplexing (OFDM) signal, −25 dBc error vector magnitude (EVM) is measured at an average output power of 12.3 dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.",

author = "Chihiro Kamidaki and Yuma Okuyama and Tatsuo Kubo and Wooram Lee and Caglar Ozdag and Bodhisatwa Sadhu and Yo Yamaguchi and Ning Guan",

note = "Publisher Copyright: Copyright{\textcopyright} 2023 The Institute of Electronics, Information and Communication Engineers.",

year = "2023",

month = nov,

doi = "10.1587/transele.2023MMI0003",

language = "English (US)",

volume = "E106.C",

pages = "625--634",

journal = "IEICE Transactions on Electronics",

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AU - Kamidaki, Chihiro

AU - Okuyama, Yuma

AU - Kubo, Tatsuo

AU - Lee, Wooram

AU - Ozdag, Caglar

AU - Sadhu, Bodhisatwa

AU - Yamaguchi, Yo

AU - Guan, Ning

PY - 2023/11

Y1 - 2023/11

N2 - This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 130-nm SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a low-loss transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25–29.5 GHz. Measurements of the front-end in TX mode demonstrate peak S21 of 30.3 dB at 26.7 GHz, S21 3-dB bandwidth of 9.8 GHz from 22.2 to 32.0 GHz, and saturated output power (Psat) above 20 dBm with power-added efficiency (PAE) above 22% from 24 to 30 GHz. For a 64-QAM 400 MHz bandwidth orthogonal frequency division multiplexing (OFDM) signal, −25 dBc error vector magnitude (EVM) is measured at an average output power of 12.3 dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.

AB - This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 130-nm SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a low-loss transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25–29.5 GHz. Measurements of the front-end in TX mode demonstrate peak S21 of 30.3 dB at 26.7 GHz, S21 3-dB bandwidth of 9.8 GHz from 22.2 to 32.0 GHz, and saturated output power (Psat) above 20 dBm with power-added efficiency (PAE) above 22% from 24 to 30 GHz. For a 64-QAM 400 MHz bandwidth orthogonal frequency division multiplexing (OFDM) signal, −25 dBc error vector magnitude (EVM) is measured at an average output power of 12.3 dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.

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A 24–30 GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS

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