A 48-79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOS

Wooram Lee

doi:10.1109/BCICTS45179.2019.8972711

A 48-79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOS

Wooram Lee

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

A 48-79 GHz low noise amplifier (LNA) with broadband phase-invariant gain control is proposed for wide-band phased array applications. The proposed IC consists of a three-stage LNA, a phase-invariant attenuator, and an output buffer. A broadband phase-invariant attenuator is implemented with a phase-compensated transmission line periodically loaded with NFETs. The proposed IC was fabricated in a 45-nm CMOS SOI process and occupies an active area of 1.1 mm². The measured gain is 22.2 dB with 31-GHz bandwidth (49% fractional bandwidth) from 48 to 79 GHz. The measured gain tuning range is higher than 8.9 dB from 63 to 80 GHz with a phase shift variation less than 6. The measured noise figure (NF) is less than 4.8 dB with an average NF of 3.8 dB from 50 to 62 GHz. The measured dc power consumption is 30 mW from a 1.2-V supply.

Original language	English (US)
Title of host publication	2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728105864
DOIs	https://doi.org/10.1109/BCICTS45179.2019.8972711
State	Published - Nov 2019
Event	2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 - Nashville, United States Duration: Nov 3 2019 → Nov 6 2019

Publication series

Name	2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019

Conference

Conference	2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019
Country/Territory	United States
City	Nashville
Period	11/3/19 → 11/6/19

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/BCICTS45179.2019.8972711

Cite this

Lee, W. (2019). A 48-79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOS. In 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 Article 8972711 (2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCICTS45179.2019.8972711

Lee, Wooram. / A 48-79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOS. 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019).

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title = "A 48-79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOS",

abstract = "A 48-79 GHz low noise amplifier (LNA) with broadband phase-invariant gain control is proposed for wide-band phased array applications. The proposed IC consists of a three-stage LNA, a phase-invariant attenuator, and an output buffer. A broadband phase-invariant attenuator is implemented with a phase-compensated transmission line periodically loaded with NFETs. The proposed IC was fabricated in a 45-nm CMOS SOI process and occupies an active area of 1.1 mm2. The measured gain is 22.2 dB with 31-GHz bandwidth (49% fractional bandwidth) from 48 to 79 GHz. The measured gain tuning range is higher than 8.9 dB from 63 to 80 GHz with a phase shift variation less than 6. The measured noise figure (NF) is less than 4.8 dB with an average NF of 3.8 dB from 50 to 62 GHz. The measured dc power consumption is 30 mW from a 1.2-V supply.",

author = "Wooram Lee",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 ; Conference date: 03-11-2019 Through 06-11-2019",

year = "2019",

month = nov,

doi = "10.1109/BCICTS45179.2019.8972711",

language = "English (US)",

series = "2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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address = "United States",

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Lee, W 2019, A 48-79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOS. in 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019., 8972711, 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019, Institute of Electrical and Electronics Engineers Inc., 2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019, Nashville, United States, 11/3/19. https://doi.org/10.1109/BCICTS45179.2019.8972711

A 48-79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOS. / Lee, Wooram.
2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8972711 (2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - A 48-79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOS

AU - Lee, Wooram

PY - 2019/11

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N2 - A 48-79 GHz low noise amplifier (LNA) with broadband phase-invariant gain control is proposed for wide-band phased array applications. The proposed IC consists of a three-stage LNA, a phase-invariant attenuator, and an output buffer. A broadband phase-invariant attenuator is implemented with a phase-compensated transmission line periodically loaded with NFETs. The proposed IC was fabricated in a 45-nm CMOS SOI process and occupies an active area of 1.1 mm2. The measured gain is 22.2 dB with 31-GHz bandwidth (49% fractional bandwidth) from 48 to 79 GHz. The measured gain tuning range is higher than 8.9 dB from 63 to 80 GHz with a phase shift variation less than 6. The measured noise figure (NF) is less than 4.8 dB with an average NF of 3.8 dB from 50 to 62 GHz. The measured dc power consumption is 30 mW from a 1.2-V supply.

AB - A 48-79 GHz low noise amplifier (LNA) with broadband phase-invariant gain control is proposed for wide-band phased array applications. The proposed IC consists of a three-stage LNA, a phase-invariant attenuator, and an output buffer. A broadband phase-invariant attenuator is implemented with a phase-compensated transmission line periodically loaded with NFETs. The proposed IC was fabricated in a 45-nm CMOS SOI process and occupies an active area of 1.1 mm2. The measured gain is 22.2 dB with 31-GHz bandwidth (49% fractional bandwidth) from 48 to 79 GHz. The measured gain tuning range is higher than 8.9 dB from 63 to 80 GHz with a phase shift variation less than 6. The measured noise figure (NF) is less than 4.8 dB with an average NF of 3.8 dB from 50 to 62 GHz. The measured dc power consumption is 30 mW from a 1.2-V supply.

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M3 - Conference contribution

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Lee W. A 48-79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOS. In 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8972711. (2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019). doi: 10.1109/BCICTS45179.2019.8972711

A 48-79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOS

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