A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput

Seung Ho Chang; Sok Kyu Lee; Seong Je Park; Min Joong Jung; Jung Chul Han; In Soo Wang; Kyu Hee Lim; Jung Hwan Lee; Ji Hwan Kim; Won Kyung Kang; Tai Kyu Kang; Hee Su Byun; Yu Jong Noh; Lee Hyun Kwon; Bon Kwang Koo; Myung Cho; Joong Seob Yang; Yo Hwan Koh

doi:10.1109/ISSCC.2009.4977397

A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput

Seung Ho Chang, Sok Kyu Lee, Seong Je Park, Min Joong Jung, Jung Chul Han, In Soo Wang, Kyu Hee Lim, Jung Hwan Lee, Ji Hwan Kim, Won Kyung Kang, Tai Kyu Kang, Hee Su Byun, Yu Jong Noh, Lee Hyun Kwon, Bon Kwang Koo, Myung Cho, Joong Seob Yang, Yo Hwan Koh

School of Engineering (Behrend)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

19 Scopus citations

Original language	English (US)
Title of host publication	2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	240-242
Number of pages	3
ISBN (Print)	1424434580, 9781424434589
DOIs	https://doi.org/10.1109/ISSCC.2009.4977397
State	Published - 2009
Event	2009 IEEE International Solid-State Circuits Conference ISSCC 2009 - San Francisco, CA, United States Duration: Feb 8 2009 → Feb 12 2009

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)	0193-6530

Conference

Conference	2009 IEEE International Solid-State Circuits Conference ISSCC 2009
Country/Territory	United States
City	San Francisco, CA
Period	2/8/09 → 2/12/09

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISSCC.2009.4977397

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Chang, S. H., Lee, S. K., Park, S. J., Jung, M. J., Han, J. C., Wang, I. S., Lim, K. H., Lee, J. H., Kim, J. H., Kang, W. K., Kang, T. K., Byun, H. S., Noh, Y. J., Kwon, L. H., Koo, B. K., Cho, M., Yang, J. S., & Koh, Y. H. (2009). A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput. In 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009 (pp. 240-242). Article 4977397 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC.2009.4977397

Chang, Seung Ho ; Lee, Sok Kyu ; Park, Seong Je et al. / A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput. 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009. Institute of Electrical and Electronics Engineers Inc., 2009. pp. 240-242 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

@inproceedings{347759c0863a48048e1ef816da2ec563,

title = "A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput",

author = "Chang, {Seung Ho} and Lee, {Sok Kyu} and Park, {Seong Je} and Jung, {Min Joong} and Han, {Jung Chul} and Wang, {In Soo} and Lim, {Kyu Hee} and Lee, {Jung Hwan} and Kim, {Ji Hwan} and Kang, {Won Kyung} and Kang, {Tai Kyu} and Byun, {Hee Su} and Noh, {Yu Jong} and Kwon, {Lee Hyun} and Koo, {Bon Kwang} and Myung Cho and Yang, {Joong Seob} and Koh, {Yo Hwan}",

year = "2009",

doi = "10.1109/ISSCC.2009.4977397",

language = "English (US)",

isbn = "1424434580",

series = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "240--242",

booktitle = "2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009",

address = "United States",

note = "2009 IEEE International Solid-State Circuits Conference ISSCC 2009 ; Conference date: 08-02-2009 Through 12-02-2009",

}

Chang, SH, Lee, SK, Park, SJ, Jung, MJ, Han, JC, Wang, IS, Lim, KH, Lee, JH, Kim, JH, Kang, WK, Kang, TK, Byun, HS, Noh, YJ, Kwon, LH, Koo, BK, Cho, M, Yang, JS & Koh, YH 2009, A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput. in 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009., 4977397, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 240-242, 2009 IEEE International Solid-State Circuits Conference ISSCC 2009, San Francisco, CA, United States, 2/8/09. https://doi.org/10.1109/ISSCC.2009.4977397

A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput. / Chang, Seung Ho; Lee, Sok Kyu; Park, Seong Je et al.
2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009. Institute of Electrical and Electronics Engineers Inc., 2009. p. 240-242 4977397 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput

AU - Chang, Seung Ho

AU - Lee, Sok Kyu

AU - Park, Seong Je

AU - Jung, Min Joong

AU - Han, Jung Chul

AU - Wang, In Soo

AU - Lim, Kyu Hee

AU - Lee, Jung Hwan

AU - Kim, Ji Hwan

AU - Kang, Won Kyung

AU - Kang, Tai Kyu

AU - Byun, Hee Su

AU - Noh, Yu Jong

AU - Kwon, Lee Hyun

AU - Koo, Bon Kwang

AU - Cho, Myung

AU - Yang, Joong Seob

AU - Koh, Yo Hwan

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U2 - 10.1109/ISSCC.2009.4977397

DO - 10.1109/ISSCC.2009.4977397

M3 - Conference contribution

AN - SCOPUS:70349268244

SN - 1424434580

SN - 9781424434589

T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

SP - 240

EP - 242

BT - 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2009 IEEE International Solid-State Circuits Conference ISSCC 2009

Y2 - 8 February 2009 through 12 February 2009

ER -

Chang SH, Lee SK, Park SJ, Jung MJ, Han JC, Wang IS et al. A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput. In 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2009. Institute of Electrical and Electronics Engineers Inc. 2009. p. 240-242. 4977397. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). doi: 10.1109/ISSCC.2009.4977397

A 48nm 32Gb 8-level NAND Flash memory with 5.5MB/s program throughput

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