A CMOS noise-squeezing amplifier

Wooram Lee; Ehsan Afshari

doi:10.1109/TMTT.2011.2178318

A CMOS noise-squeezing amplifier

Wooram Lee, Ehsan Afshari

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Noise squeezing occurs through phase-sensitive gain implemented by a parametric process in a nonlinear LC resonator. This process enhances the sensitivity for one quadrature component of an input signal at the expense of degrading the sensitivity for the other quadrature. We demonstrate an 8.75-GHz parametric resonant amplifier in a 0.13-&mum CMOS process, which provides gain of 21 dB and 12 dB for the two quadrature components. This 9-dB gain difference results in a 2.5-dB sensitivity improvement for one quadrature, while it degrades the other quadrature sensitivity by 6.4 dB. The amplifier bandwidth is around 800 MHz and draws 36 mA from a 1.2-V supply.

Original language	English (US)
Article number	6129525
Pages (from-to)	329-339
Number of pages	11
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	60
Issue number	2
DOIs	https://doi.org/10.1109/TMTT.2011.2178318
State	Published - Feb 2012

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TMTT.2011.2178318

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title = "A CMOS noise-squeezing amplifier",

abstract = "Noise squeezing occurs through phase-sensitive gain implemented by a parametric process in a nonlinear LC resonator. This process enhances the sensitivity for one quadrature component of an input signal at the expense of degrading the sensitivity for the other quadrature. We demonstrate an 8.75-GHz parametric resonant amplifier in a 0.13-&mum CMOS process, which provides gain of 21 dB and 12 dB for the two quadrature components. This 9-dB gain difference results in a 2.5-dB sensitivity improvement for one quadrature, while it degrades the other quadrature sensitivity by 6.4 dB. The amplifier bandwidth is around 800 MHz and draws 36 mA from a 1.2-V supply.",

author = "Wooram Lee and Ehsan Afshari",

note = "Funding Information: Manuscript received May 27, 2011; revised November 18, 2011; accepted November 27, 2011. Date of publication January 12, 2012; date of current version February 03, 2012. This work was supported by the C2S2 Focus Center, one of six research centers funded under the Focus Center Research Program (FCRP), a Semiconductor Research Corporation entity as well as the NSF under Early Career Award ECCS-0954537. The E/M simulations in this work were supported by Sonnet Software Incorporated. The work of W. Lee was supported by a Samsung fellowship and an IEEE Solid-State Circuits Society pre-doctoral fellowship.",

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N2 - Noise squeezing occurs through phase-sensitive gain implemented by a parametric process in a nonlinear LC resonator. This process enhances the sensitivity for one quadrature component of an input signal at the expense of degrading the sensitivity for the other quadrature. We demonstrate an 8.75-GHz parametric resonant amplifier in a 0.13-&mum CMOS process, which provides gain of 21 dB and 12 dB for the two quadrature components. This 9-dB gain difference results in a 2.5-dB sensitivity improvement for one quadrature, while it degrades the other quadrature sensitivity by 6.4 dB. The amplifier bandwidth is around 800 MHz and draws 36 mA from a 1.2-V supply.

AB - Noise squeezing occurs through phase-sensitive gain implemented by a parametric process in a nonlinear LC resonator. This process enhances the sensitivity for one quadrature component of an input signal at the expense of degrading the sensitivity for the other quadrature. We demonstrate an 8.75-GHz parametric resonant amplifier in a 0.13-&mum CMOS process, which provides gain of 21 dB and 12 dB for the two quadrature components. This 9-dB gain difference results in a 2.5-dB sensitivity improvement for one quadrature, while it degrades the other quadrature sensitivity by 6.4 dB. The amplifier bandwidth is around 800 MHz and draws 36 mA from a 1.2-V supply.

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A CMOS noise-squeezing amplifier

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