A Compact Ferroelectric 2T-(n+1)C Cell to Implement AND-OR Logic in Memory

Yi Xiao, Yixin Xu, Shan Deng, Zijian Zhao, Sumitha George, Kai Ni, Vijaykrishnan Narayanan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

With the proliferation of data-intensive applications, various logic-in-memory (LIM)/ in-memory computing (IMC) solutions are emerging. These solutions aim to mitigate the von Neumann bottleneck caused by frequent data transfer between computational units and memory arrays. Ferroelectric devices such as ferroelectric random access memory (FeRAM), ferroelectric FET (FeFET) and ferroelectric tunnel junction (FTJ) etc., are promising nonvolatile memory (NVM) candidates for the LIM application due to their lower write power compared to competing NVM technologies. In this work, we propose a compact ferroelectric 2T-(n+1) C LIM cell to implement ANDOR logic based on the concept of quasi-nondestructive readout (QNRO) FeRAM. In comparison with 1T-1C FeRAM and 1T FeFET, our structure has both distinguished write and read characteristics. The n-bit AND-OR logic accomplished by our design has 2mathrm{n}times performance improvement and 5.1times integration density gain against the conventional CMOS logic. Additionally, the area efficiency of our design can be further enhanced by 3D integration. We then verify the correctness of a 3-bit AND-OR logic gate by conducting circuit simulation and device experiments. The simulation results demonstrate a sim 70 ON/OFF ratio with the ON/OFF current window of gt866mathrm{nA}, and for the experimental results the mathrm{ON}/mathrm{OFF} ratio is 3.8 with the current window of gt68mumathrm{A}.

Original languageEnglish (US)
Title of host publication2023 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2023 - Proceedings
EditorsFernanda Kastensmidt, Ricardo Reis, Aida Todri-Sanial, Hai Li, Carolina Metzler
PublisherIEEE Computer Society
ISBN (Electronic)9798350327694
DOIs
StatePublished - 2023
Event26th IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2023 - Foz do Iguacu, Brazil
Duration: Jun 20 2023Jun 23 2023

Publication series

NameProceedings of IEEE Computer Society Annual Symposium on VLSI, ISVLSI
Volume2023-June
ISSN (Print)2159-3469
ISSN (Electronic)2159-3477

Conference

Conference26th IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2023
Country/TerritoryBrazil
CityFoz do Iguacu
Period6/20/236/23/23

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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