@inproceedings{ceb2f0ec7bdd41e799837d697284a422,
title = "A comparative study of anneal efficiencies of deuterium and hydrogen in plasma-processed transistors",
abstract = "We have critically studied the thermal anneal recovery of plasma processing damage of submicron ULSI devices in hydrogen (H2) and deuterium (D2) ambients, and have observed improved passivation of interface states (Dit) with D2 anneals relative to H2. The charge pumping current (Icp) reduces by 15%, and the plasma-damaged devices annealed in D2 also exhibit improved recovery of transconductance Gm and threshold voltage Vt. An increase in hot carrier resistance of such plasma-damaged transistors annealed in D2 has been observed for the first time. The improvement of Gm and reduction in Icp are found to be monotonic functions of anneal temperature T, while Vt recovery is independent of T, suggesting oxide trapped charge as the likely source of threshold voltage shifts caused by processing.",
author = "Sanjay Rangan and S. Ashok and S. Krishnan",
year = "1998",
language = "English (US)",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "564--567",
editor = "A. Touboul and Y. Danto and H. Grunbacher",
booktitle = "ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference",
address = "United States",
note = "28th European Solid-State Device Research Conference, ESSDERC 1998 ; Conference date: 08-09-1998 Through 10-09-1998",
}