A comparison of front- and backside-illuminated high-saturation power partially depleted absorber photodetecters

Xiaowei Li; Ning Li; Stéphane Demiguel; Joe C. Campbell; David Tulchinsky; Keith J. Williams

doi:10.1109/JQE.2004.833206

A comparison of front- and backside-illuminated high-saturation power partially depleted absorber photodetecters

Xiaowei Li, Ning Li, Stéphane Demiguel, Joe C. Campbell, David Tulchinsky, Keith J. Williams

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

A systematic study of high-saturation-current p-i-n In_0.53 Ga_0.47 As photodiodes with a partially depleted absorber (PDA has been made under front (p-side) and back (n-side) illumination. The photodiode structure consists of an In_0.53 Ga_0.47 As absorption region (450-nm p-InGaAs, 250-nm unintentionally doped InGaAs, and 60-nm n-InGaAs) sandwiched between p- and n-InP layers. For front illumination of a 34-μm-diameter photodiode at 2-V bias the saturation currents were 23 and 24 mA at 10 and 1 GHz, respectively. Under similar conditions, backside-illumination resulted in saturation currents of 76 mA (10 GHz) and >160 mA (1 GHz). Backside illumination of a 100-μm-diameter photodiode achieved a saturation current >400 mA. For the case of front illumination the device lateral resistance dominates whereas for backside illumination the response is determined primarily by the space charge effect.

Original language	English (US)
Pages (from-to)	1321-1325
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	40
Issue number	9
DOIs	https://doi.org/10.1109/JQE.2004.833206
State	Published - Sep 2004

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2004.833206

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title = "A comparison of front- and backside-illuminated high-saturation power partially depleted absorber photodetecters",

abstract = "A systematic study of high-saturation-current p-i-n In0.53 Ga0.47 As photodiodes with a partially depleted absorber (PDA has been made under front (p-side) and back (n-side) illumination. The photodiode structure consists of an In0.53 Ga0.47 As absorption region (450-nm p-InGaAs, 250-nm unintentionally doped InGaAs, and 60-nm n-InGaAs) sandwiched between p- and n-InP layers. For front illumination of a 34-μm-diameter photodiode at 2-V bias the saturation currents were 23 and 24 mA at 10 and 1 GHz, respectively. Under similar conditions, backside-illumination resulted in saturation currents of 76 mA (10 GHz) and >160 mA (1 GHz). Backside illumination of a 100-μm-diameter photodiode achieved a saturation current >400 mA. For the case of front illumination the device lateral resistance dominates whereas for backside illumination the response is determined primarily by the space charge effect.",

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year = "2004",

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AU - Li, Xiaowei

AU - Li, Ning

AU - Demiguel, Stéphane

AU - Campbell, Joe C.

AU - Tulchinsky, David

AU - Williams, Keith J.

PY - 2004/9

Y1 - 2004/9

N2 - A systematic study of high-saturation-current p-i-n In0.53 Ga0.47 As photodiodes with a partially depleted absorber (PDA has been made under front (p-side) and back (n-side) illumination. The photodiode structure consists of an In0.53 Ga0.47 As absorption region (450-nm p-InGaAs, 250-nm unintentionally doped InGaAs, and 60-nm n-InGaAs) sandwiched between p- and n-InP layers. For front illumination of a 34-μm-diameter photodiode at 2-V bias the saturation currents were 23 and 24 mA at 10 and 1 GHz, respectively. Under similar conditions, backside-illumination resulted in saturation currents of 76 mA (10 GHz) and >160 mA (1 GHz). Backside illumination of a 100-μm-diameter photodiode achieved a saturation current >400 mA. For the case of front illumination the device lateral resistance dominates whereas for backside illumination the response is determined primarily by the space charge effect.

AB - A systematic study of high-saturation-current p-i-n In0.53 Ga0.47 As photodiodes with a partially depleted absorber (PDA has been made under front (p-side) and back (n-side) illumination. The photodiode structure consists of an In0.53 Ga0.47 As absorption region (450-nm p-InGaAs, 250-nm unintentionally doped InGaAs, and 60-nm n-InGaAs) sandwiched between p- and n-InP layers. For front illumination of a 34-μm-diameter photodiode at 2-V bias the saturation currents were 23 and 24 mA at 10 and 1 GHz, respectively. Under similar conditions, backside-illumination resulted in saturation currents of 76 mA (10 GHz) and >160 mA (1 GHz). Backside illumination of a 100-μm-diameter photodiode achieved a saturation current >400 mA. For the case of front illumination the device lateral resistance dominates whereas for backside illumination the response is determined primarily by the space charge effect.

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A comparison of front- and backside-illuminated high-saturation power partially depleted absorber photodetecters

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