A comparison of Hg1-xCdxTe MOCVD films on lattice-matched (CdZn)Te and Cd(TeSe) substrates

M. J. Bevan, N. J. Doyle, D. Snyder

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Epitaxial layers of Hg1-xCdxTe have been grown by metalorganic chemical vapor deposition (MOCVD) with the interdiffused multilayer process using the tellurium precursor diisopropyltelluride. A comparison is made of the structural quality of the films on lattice-matched substrates of (CdZn)Te and Cd(TeSe) using X-ray diffraction techniques. The interdiffused technique using deposition rates in excess of 10 μm/h is not detrimental to the crystal quality, and Hg1-xCdxTe was grown of comparable quality to that of the substrate. The epilayers are free of twinning and have the lowest values of rocking curve widths reported for MOCVD Hg1-xCdxTe. The as-grown films were p-type at 77 K, consistent with an anticipated mercury vacancy concentration of 7 x 1016 cm-3.

Original languageEnglish (US)
Pages (from-to)785-792
Number of pages8
JournalJournal of Crystal Growth
Issue number4
StatePublished - Jun 1 1990

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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