A comparison of Hg1-xCdxTe MOCVD films on lattice-matched (CdZn)Te and Cd(TeSe) substrates

M. J. Bevan; N. J. Doyle; D. Snyder

doi:10.1016/0022-0248(90)90843-A

A comparison of Hg_1-xCd_xTe MOCVD films on lattice-matched (CdZn)Te and Cd(TeSe) substrates

M. J. Bevan, N. J. Doyle, D. Snyder

Applied Research Laboratory (ARL)

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Epitaxial layers of Hg_1-xCd_xTe have been grown by metalorganic chemical vapor deposition (MOCVD) with the interdiffused multilayer process using the tellurium precursor diisopropyltelluride. A comparison is made of the structural quality of the films on lattice-matched substrates of (CdZn)Te and Cd(TeSe) using X-ray diffraction techniques. The interdiffused technique using deposition rates in excess of 10 μm/h is not detrimental to the crystal quality, and Hg_1-xCd_xTe was grown of comparable quality to that of the substrate. The epilayers are free of twinning and have the lowest values of rocking curve widths reported for MOCVD Hg_1-xCd_xTe. The as-grown films were p-type at 77 K, consistent with an anticipated mercury vacancy concentration of 7 x 10¹⁶ cm^-3.

Original language	English (US)
Pages (from-to)	785-792
Number of pages	8
Journal	Journal of Crystal Growth
Volume	102
Issue number	4
DOIs	https://doi.org/10.1016/0022-0248(90)90843-A
State	Published - Jun 1 1990

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(90)90843-A

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title = "A comparison of Hg1-xCdxTe MOCVD films on lattice-matched (CdZn)Te and Cd(TeSe) substrates",

abstract = "Epitaxial layers of Hg1-xCdxTe have been grown by metalorganic chemical vapor deposition (MOCVD) with the interdiffused multilayer process using the tellurium precursor diisopropyltelluride. A comparison is made of the structural quality of the films on lattice-matched substrates of (CdZn)Te and Cd(TeSe) using X-ray diffraction techniques. The interdiffused technique using deposition rates in excess of 10 μm/h is not detrimental to the crystal quality, and Hg1-xCdxTe was grown of comparable quality to that of the substrate. The epilayers are free of twinning and have the lowest values of rocking curve widths reported for MOCVD Hg1-xCdxTe. The as-grown films were p-type at 77 K, consistent with an anticipated mercury vacancy concentration of 7 x 1016 cm-3.",

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AU - Bevan, M. J.

AU - Doyle, N. J.

AU - Snyder, D.

PY - 1990/6/1

Y1 - 1990/6/1

N2 - Epitaxial layers of Hg1-xCdxTe have been grown by metalorganic chemical vapor deposition (MOCVD) with the interdiffused multilayer process using the tellurium precursor diisopropyltelluride. A comparison is made of the structural quality of the films on lattice-matched substrates of (CdZn)Te and Cd(TeSe) using X-ray diffraction techniques. The interdiffused technique using deposition rates in excess of 10 μm/h is not detrimental to the crystal quality, and Hg1-xCdxTe was grown of comparable quality to that of the substrate. The epilayers are free of twinning and have the lowest values of rocking curve widths reported for MOCVD Hg1-xCdxTe. The as-grown films were p-type at 77 K, consistent with an anticipated mercury vacancy concentration of 7 x 1016 cm-3.

AB - Epitaxial layers of Hg1-xCdxTe have been grown by metalorganic chemical vapor deposition (MOCVD) with the interdiffused multilayer process using the tellurium precursor diisopropyltelluride. A comparison is made of the structural quality of the films on lattice-matched substrates of (CdZn)Te and Cd(TeSe) using X-ray diffraction techniques. The interdiffused technique using deposition rates in excess of 10 μm/h is not detrimental to the crystal quality, and Hg1-xCdxTe was grown of comparable quality to that of the substrate. The epilayers are free of twinning and have the lowest values of rocking curve widths reported for MOCVD Hg1-xCdxTe. The as-grown films were p-type at 77 K, consistent with an anticipated mercury vacancy concentration of 7 x 1016 cm-3.

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A comparison of Hg_1-xCd_xTe MOCVD films on lattice-matched (CdZn)Te and Cd(TeSe) substrates

Abstract

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