A Comparison of Ionizing Radiation and Hot Electron Effects in MOS Structures

R. E. Mikawa; P. M. Lenahan

doi:10.1109/TNS.1984.4333553

A Comparison of Ionizing Radiation and Hot Electron Effects in MOS Structures

R. E. Mikawa, P. M. Lenahan

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Abstract

We use electron spin resonance to compare the effects of electron injection and gamma radiation on MOS devices. Electron injection is similar to ionizing radiation in that in both cases Pb centers are generated at the Si/SiO2 interface. However, the effects are not identical; although ionizing radiation creates E’ centers in the SiO2, we are unable to observe any E’ generation in oxides subjected to electron injection.

Original language	English (US)
Pages (from-to)	1573-1575
Number of pages	3
Journal	IEEE Transactions on Nuclear Science
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/TNS.1984.4333553
State	Published - Dec 1984

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.1984.4333553

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title = "A Comparison of Ionizing Radiation and Hot Electron Effects in MOS Structures",

abstract = "We use electron spin resonance to compare the effects of electron injection and gamma radiation on MOS devices. Electron injection is similar to ionizing radiation in that in both cases Pb centers are generated at the Si/SiO2 interface. However, the effects are not identical; although ionizing radiation creates E{\textquoteright} centers in the SiO2, we are unable to observe any E{\textquoteright} generation in oxides subjected to electron injection.",

author = "Mikawa, {R. E.} and Lenahan, {P. M.}",

year = "1984",

month = dec,

doi = "10.1109/TNS.1984.4333553",

language = "English (US)",

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journal = "IEEE Transactions on Nuclear Science",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - A Comparison of Ionizing Radiation and Hot Electron Effects in MOS Structures

AU - Mikawa, R. E.

AU - Lenahan, P. M.

PY - 1984/12

Y1 - 1984/12

N2 - We use electron spin resonance to compare the effects of electron injection and gamma radiation on MOS devices. Electron injection is similar to ionizing radiation in that in both cases Pb centers are generated at the Si/SiO2 interface. However, the effects are not identical; although ionizing radiation creates E’ centers in the SiO2, we are unable to observe any E’ generation in oxides subjected to electron injection.

AB - We use electron spin resonance to compare the effects of electron injection and gamma radiation on MOS devices. Electron injection is similar to ionizing radiation in that in both cases Pb centers are generated at the Si/SiO2 interface. However, the effects are not identical; although ionizing radiation creates E’ centers in the SiO2, we are unable to observe any E’ generation in oxides subjected to electron injection.

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

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ER -

A Comparison of Ionizing Radiation and Hot Electron Effects in MOS Structures

Abstract

All Science Journal Classification (ASJC) codes

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