TY - GEN
T1 - A computationally efficient compact model for leakage in cross-point array
AU - Aziz, Ahmedullah
AU - Jao, Nicholas
AU - Datta, Suman
AU - Narayanan, Vijaykrishnan
AU - Gupta, Sumeet Kumar
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/10/25
Y1 - 2017/10/25
N2 - Cross-point architecture, while being appealing in consideration of high integration density, suffers from leakage through sneak paths across the array. The leakage current flowing through half-accessed and in some cases, unaccessed cells (and the corresponding leakage power) are important determinants of array performance. Proper estimation of these components is computationally challenging and often demands rigorous simulation efforts. This paper presents a computationally efficient compact model to assess the leakage in cross-point array employing threshold switch selectors. We provide closed form mathematical expressions that govern our model and explain the derivation methodologies. We analyze and verify the validity of the model by cross-checking with results from conventional rigorous array simulations. The model shows excellent matching (∼99% accuracy) with rigorous simulations for different array sizes (16×16 through 256×256). The model has been tested with various ranges of selector OFF resistance (0.1 ΜΩ to 1 ΟΩ), interconnect resistance (1 mΩ/□ to 10 Ω/□) and access voltage (0.2V to 1V). The test results from the model show accurate response in comparison with those obtained from intensive array simulations.
AB - Cross-point architecture, while being appealing in consideration of high integration density, suffers from leakage through sneak paths across the array. The leakage current flowing through half-accessed and in some cases, unaccessed cells (and the corresponding leakage power) are important determinants of array performance. Proper estimation of these components is computationally challenging and often demands rigorous simulation efforts. This paper presents a computationally efficient compact model to assess the leakage in cross-point array employing threshold switch selectors. We provide closed form mathematical expressions that govern our model and explain the derivation methodologies. We analyze and verify the validity of the model by cross-checking with results from conventional rigorous array simulations. The model shows excellent matching (∼99% accuracy) with rigorous simulations for different array sizes (16×16 through 256×256). The model has been tested with various ranges of selector OFF resistance (0.1 ΜΩ to 1 ΟΩ), interconnect resistance (1 mΩ/□ to 10 Ω/□) and access voltage (0.2V to 1V). The test results from the model show accurate response in comparison with those obtained from intensive array simulations.
UR - http://www.scopus.com/inward/record.url?scp=85039059196&partnerID=8YFLogxK
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U2 - 10.23919/SISPAD.2017.8085284
DO - 10.23919/SISPAD.2017.8085284
M3 - Conference contribution
AN - SCOPUS:85039059196
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 141
EP - 144
BT - 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
Y2 - 7 September 2017 through 9 September 2017
ER -