A design scheme for topological insulators based bonds, bands, symmetry and spin orbit coupling

C. Felser, L. Müchler, S. Chadov, G. H. Fecher, B. Yan, J. Kübler, H. J. Zhang, S. C. Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report about a design scheme for topological insulators from the viewpoint of materials science or solid state chemistry. Topological insulators are a nice example for theory guided materials research. The electronic structure can be translated into the language of chemistry. The symmetry of the crystal- and the band structure, orbitals and spin orbit coupling determine whether a semiconductor is topologic or trivial. In this paper we will discuss the necessary and sufficient conditions for new TI materials, based in symmetry and bonding arguments.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages663-666
Number of pages4
Edition9
ISBN (Print)9781607683575
DOIs
StatePublished - 2013
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

All Science Journal Classification (ASJC) codes

  • General Engineering

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