A ferroelectric oxide made directly on silicon

Maitri P. Warusawithana, Cheng Cen, Charles R. Sleasman, Joseph C. Woicik, Yulan Li, Lena Fitting Kourkoutis, Jeffrey A. Klug, Hao Li, Philip Ryan, Li Peng Wang, Michael Bedzyk, David A. Muller, Long Qing Chen, Jeremy Levy, Darrell G. Schlom

Research output: Contribution to journalArticlepeer-review

346 Scopus citations


Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering technological advancement. With fundamental limits to this technology close at hand, alternatives to silicon dioxide are being pursued to enable new functionality and device architectures. We achieved ferroelectric functionality in intimate contact with silicon by growing coherently strained strontium titanate (SrTiO3) films via oxide molecular beam epitaxy in direct contact with silicon, with no interfacial silicon dioxide. We observed ferroelectricity in these ultrathin SrTiO3 layers by means of piezoresponse force microscopy. Stable ferroelectric nanodomains created in SrTiO3 were observed at temperatures as high as 400 kelvin.

Original languageEnglish (US)
Pages (from-to)367-370
Number of pages4
Issue number5925
StatePublished - Apr 17 2009

All Science Journal Classification (ASJC) codes

  • General


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