A fully-integrated 94-GHz 16-element dual-output phased-array transmitter in SiGe BiCMOS with PSAT>6.5 dBm up to 105 °c

Wooram Lee; Caglar Ozdag; Yigit Aydogan; Jean Olivier Plouchart; Mark Yeck; Alper Cabuk; Asim Kepkep; Emre Apaydin; Alberto Valdes-Garcia

doi:10.1109/CSICS.2017.8240454

A fully-integrated 94-GHz 16-element dual-output phased-array transmitter in SiGe BiCMOS with P_SAT>6.5 dBm up to 105 °c

Wooram Lee, Caglar Ozdag, Yigit Aydogan, Jean Olivier Plouchart, Mark Yeck, Alper Cabuk, Asim Kepkep, Emre Apaydin, Alberto Valdes-Garcia

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

A 94-GHz 16-element phased array transmitter IC in a 130 nm BiCMOS technology is reported. The IC integrates 16 transmitter front ends with two independent outputs, a 1-to-16 power splitter, an IF-to-RF up-converter, a frequency synthesizer with continuous lock detection, an IF/baseband, and digital circuitry including serial interface and front-end memory within an IC size of 6.7 mm × 5.6 mm. A milimeter-wave (mmWave) up-conversion mixer design is introduced which enables a TX output signal-to-LO leakage ratio higher than 35 dB. On-wafer measurements at 94GHz taken at 25°C show IF-to-RF conversion gain of 35 dB, oP1dB of 4 dBm, Psat of 7.8 dBm and 360° phase shift capability per element, with a total power consumption of 3 W. The IC maintains Psat > 6.5 dBm at 94 GHz up to 105 °C.

Original language	English (US)
Title of host publication	2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781509060696
DOIs	https://doi.org/10.1109/CSICS.2017.8240454
State	Published - Dec 26 2017
Event	39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017 - Miami, United States Duration: Oct 22 2017 → Oct 25 2017

Publication series

Name	2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
Volume	2017-January

Conference

Conference	39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
Country/Territory	United States
City	Miami
Period	10/22/17 → 10/25/17

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/CSICS.2017.8240454

Cite this

Lee, W., Ozdag, C., Aydogan, Y., Plouchart, J. O., Yeck, M., Cabuk, A., Kepkep, A., Apaydin, E., & Valdes-Garcia, A. (2017). A fully-integrated 94-GHz 16-element dual-output phased-array transmitter in SiGe BiCMOS with P_SAT>6.5 dBm up to 105 °c. In 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017 (pp. 1-4). (2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSICS.2017.8240454

Lee, Wooram ; Ozdag, Caglar ; Aydogan, Yigit et al. / A fully-integrated 94-GHz 16-element dual-output phased-array transmitter in SiGe BiCMOS with P_SAT>6.5 dBm up to 105 °c. 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-4 (2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017).

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title = "A fully-integrated 94-GHz 16-element dual-output phased-array transmitter in SiGe BiCMOS with PSAT>6.5 dBm up to 105 °c",

abstract = "A 94-GHz 16-element phased array transmitter IC in a 130 nm BiCMOS technology is reported. The IC integrates 16 transmitter front ends with two independent outputs, a 1-to-16 power splitter, an IF-to-RF up-converter, a frequency synthesizer with continuous lock detection, an IF/baseband, and digital circuitry including serial interface and front-end memory within an IC size of 6.7 mm × 5.6 mm. A milimeter-wave (mmWave) up-conversion mixer design is introduced which enables a TX output signal-to-LO leakage ratio higher than 35 dB. On-wafer measurements at 94GHz taken at 25°C show IF-to-RF conversion gain of 35 dB, oP1dB of 4 dBm, Psat of 7.8 dBm and 360° phase shift capability per element, with a total power consumption of 3 W. The IC maintains Psat > 6.5 dBm at 94 GHz up to 105 °C.",

author = "Wooram Lee and Caglar Ozdag and Yigit Aydogan and Plouchart, {Jean Olivier} and Mark Yeck and Alper Cabuk and Asim Kepkep and Emre Apaydin and Alberto Valdes-Garcia",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017 ; Conference date: 22-10-2017 Through 25-10-2017",

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Lee, W, Ozdag, C, Aydogan, Y, Plouchart, JO, Yeck, M, Cabuk, A, Kepkep, A, Apaydin, E & Valdes-Garcia, A 2017, A fully-integrated 94-GHz 16-element dual-output phased-array transmitter in SiGe BiCMOS with P_SAT>6.5 dBm up to 105 °c. in 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017, Miami, United States, 10/22/17. https://doi.org/10.1109/CSICS.2017.8240454

A fully-integrated 94-GHz 16-element dual-output phased-array transmitter in SiGe BiCMOS with P_SAT>6.5 dBm up to 105 °c. / Lee, Wooram; Ozdag, Caglar; Aydogan, Yigit et al.
2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-4 (2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Lee, Wooram

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AU - Aydogan, Yigit

AU - Plouchart, Jean Olivier

AU - Yeck, Mark

AU - Cabuk, Alper

AU - Kepkep, Asim

AU - Apaydin, Emre

AU - Valdes-Garcia, Alberto

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N2 - A 94-GHz 16-element phased array transmitter IC in a 130 nm BiCMOS technology is reported. The IC integrates 16 transmitter front ends with two independent outputs, a 1-to-16 power splitter, an IF-to-RF up-converter, a frequency synthesizer with continuous lock detection, an IF/baseband, and digital circuitry including serial interface and front-end memory within an IC size of 6.7 mm × 5.6 mm. A milimeter-wave (mmWave) up-conversion mixer design is introduced which enables a TX output signal-to-LO leakage ratio higher than 35 dB. On-wafer measurements at 94GHz taken at 25°C show IF-to-RF conversion gain of 35 dB, oP1dB of 4 dBm, Psat of 7.8 dBm and 360° phase shift capability per element, with a total power consumption of 3 W. The IC maintains Psat > 6.5 dBm at 94 GHz up to 105 °C.

AB - A 94-GHz 16-element phased array transmitter IC in a 130 nm BiCMOS technology is reported. The IC integrates 16 transmitter front ends with two independent outputs, a 1-to-16 power splitter, an IF-to-RF up-converter, a frequency synthesizer with continuous lock detection, an IF/baseband, and digital circuitry including serial interface and front-end memory within an IC size of 6.7 mm × 5.6 mm. A milimeter-wave (mmWave) up-conversion mixer design is introduced which enables a TX output signal-to-LO leakage ratio higher than 35 dB. On-wafer measurements at 94GHz taken at 25°C show IF-to-RF conversion gain of 35 dB, oP1dB of 4 dBm, Psat of 7.8 dBm and 360° phase shift capability per element, with a total power consumption of 3 W. The IC maintains Psat > 6.5 dBm at 94 GHz up to 105 °C.

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Lee W, Ozdag C, Aydogan Y, Plouchart JO, Yeck M, Cabuk A et al. A fully-integrated 94-GHz 16-element dual-output phased-array transmitter in SiGe BiCMOS with P_SAT>6.5 dBm up to 105 °c. In 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-4. (2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017). doi: 10.1109/CSICS.2017.8240454